| Presentation | 2007-02-02 Spin-orbit interaction dependence on vertical electric field in InAs based HEMTs Takashi Matsuda, Kanji Yoh, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is desirable for the realization of spin-transistor that electron spin-orbit interaction can be controlled either by external forcing or by the design of device. We fabricated unique InAs based HEMT whose sheet electron density is as high as 2x10^<12>cm^<-2>. For that high electron density, the wave function of the electron in the channel has its peak on the interface between the subchannel and channel layer. Spin-orbit interaction was estimated by analyzing Shubnikov de Haas oscillation and found out Rashba coefficient to be 50x10^<-12>eVm. This figure is quite big compared with the figure 30x10^<-12>eVm, which is usually reported as the Rashba coefficient of InAs. Estimation by k-p perturbation theory was also carried out and showed the Rashba coefficient of the structure is 36x10^<-12>eVm. This imply the spin-orbit interaction in the structure can be quite big and the origin of spin-orbit interaction is from the wave function distribution on the interface of the channel rather than the bottom of the channel. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | spintronics / spin-orbit interaction / spin-transistor |
| Paper # | ED2006-248,SDM2006-236 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/25(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Spin-orbit interaction dependence on vertical electric field in InAs based HEMTs |
| Sub Title (in English) | |
| Keyword(1) | spintronics |
| Keyword(2) | spin-orbit interaction |
| Keyword(3) | spin-transistor |
| 1st Author's Name | Takashi Matsuda |
| 1st Author's Affiliation | RCIQE, Hokkaido University() |
| 2nd Author's Name | Kanji Yoh |
| 2nd Author's Affiliation | RCIQE, Hokkaido University |
| Date | 2007-02-02 |
| Paper # | ED2006-248,SDM2006-236 |
| Volume (vol) | vol.106 |
| Number (no) | 520 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |