Presentation 2007-02-01
Theoretical Analysis of Fluoride-based Intersubband Transition Laser on Si substrate
Keisuke JINEN, Kaoru UCHIDA, Shinji KODAIRA, Masahiro WATANABE, Masahiro ASADA,
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Abstract(in English) CdF_2/CaF_2 heterostructure is a good candidate for quantum-effect optical devices utilizing conduction band subbands, because the heterostructure can be grown on Si substrate epitaxially and has a large conduction band offset at the heterointerface. In this report, fluoride-based intersubband transition (ISBT) laser is analyzed and threshold current density of the laser is evaluated.
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Keyword(in English) CdF_2/CaF_2 / Si substrate / Intersubband Transition Laser / Near Infrared / LO phonon
Paper # ED2006-244,SDM2006-232
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Committee ED
Conference Date 2007/1/25(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Theoretical Analysis of Fluoride-based Intersubband Transition Laser on Si substrate
Sub Title (in English)
Keyword(1) CdF_2/CaF_2
Keyword(2) Si substrate
Keyword(3) Intersubband Transition Laser
Keyword(4) Near Infrared
Keyword(5) LO phonon
1st Author's Name Keisuke JINEN
1st Author's Affiliation Interdiciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology()
2nd Author's Name Kaoru UCHIDA
2nd Author's Affiliation Interdiciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
3rd Author's Name Shinji KODAIRA
3rd Author's Affiliation Interdiciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
4th Author's Name Masahiro WATANABE
4th Author's Affiliation SORST-JST
5th Author's Name Masahiro ASADA
5th Author's Affiliation CREST-JST
Date 2007-02-01
Paper # ED2006-244,SDM2006-232
Volume (vol) vol.106
Number (no) 520
Page pp.pp.-
#Pages 6
Date of Issue