| Presentation | 2007-02-01 SiGe Quantum Effect Devices : Resonant Tunneling Diode and Ge Dot Array Technologies Yoshiyuki SUDA, Hirotaka Maekawa, Yoshihiro SANO, Yoichi TAKAHASHI, Tadamasa KOBAYASHI, Hiroaki HANABUSA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We are developing SiGe resonant tunneling diodes and an artificially positioned Ge dot array for light communication systems as next-generation nano devices using a Si-system material which is promising in terms of earth resources. Through this work, we have developed a S_<1-x>Ge_x sputter epitaxy method in terms of environmental load issues. We also have proposed a strain-relieving quadruple-layer buffer with which misfit dislocations are evenly distributed in the lower two interfaces and the upper two layers prevent threading dislocations from being propagated to the buffer surface. With this buffer, we have developed electron-tunneling vertical- and planer-type double-quantum-well RTDs. And the negative resistance characteristics of double-quantum-well hole-tunneling RTDs have been first observed at room temperature. Further, we have cleared the Ge dot artificially positioning mechanisms and method and have successfully fabricated artificially dot-positioned stacked Ge dot array. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum Effect Device / Resonant Tunneling Diode / Strain-Relief / Ge Dot / Nano Device |
| Paper # | ED2006-243,SDM2006-231 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | SiGe Quantum Effect Devices : Resonant Tunneling Diode and Ge Dot Array Technologies |
| Sub Title (in English) | |
| Keyword(1) | Quantum Effect Device |
| Keyword(2) | Resonant Tunneling Diode |
| Keyword(3) | Strain-Relief |
| Keyword(4) | Ge Dot |
| Keyword(5) | Nano Device |
| 1st Author's Name | Yoshiyuki SUDA |
| 1st Author's Affiliation | Graduate School of Engineering, Tokyo University of Agriculture and Technology() |
| 2nd Author's Name | Hirotaka Maekawa |
| 2nd Author's Affiliation | Graduate School of Engineering, Tokyo University of Agriculture and Technology |
| 3rd Author's Name | Yoshihiro SANO |
| 3rd Author's Affiliation | Graduate School of Engineering, Tokyo University of Agriculture and Technology |
| 4th Author's Name | Yoichi TAKAHASHI |
| 4th Author's Affiliation | Graduate School of Engineering, Tokyo University of Agriculture and Technology |
| 5th Author's Name | Tadamasa KOBAYASHI |
| 5th Author's Affiliation | Graduate School of Engineering, Tokyo University of Agriculture and Technology |
| 6th Author's Name | Hiroaki HANABUSA |
| 6th Author's Affiliation | Graduate School of Engineering, Tokyo University of Agriculture and Technology |
| Date | 2007-02-01 |
| Paper # | ED2006-243,SDM2006-231 |
| Volume (vol) | vol.106 |
| Number (no) | 520 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |