Presentation 2007-02-01
Physics-Based SPICE Modeling of Triple Barrier Resonant Tunneling Diodes
Naoya ASAOKA, Michihiko SUHARA, Tsugunori OKUMURA,
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Abstract(in English) To formulate SPICE model of triple barrier resonant tunneling diodes, analytical continuous function of current-voltage characteristics is derived based on physics of electron transportation in hetrostructure. The formulated analytical function showed very good match to the previously reported experimental current-voltage characteristics of GaAs, InP, and SiGe based triple barrier resonant tunneling diodes and is suitable for evaluating resonant level width and voltage-energy conversion factor.
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Keyword(in English) triple barrier resonant tunneling diodes / SPICE modeling
Paper # ED2006-240,SDM2006-228
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Committee ED
Conference Date 2007/1/25(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Physics-Based SPICE Modeling of Triple Barrier Resonant Tunneling Diodes
Sub Title (in English)
Keyword(1) triple barrier resonant tunneling diodes
Keyword(2) SPICE modeling
1st Author's Name Naoya ASAOKA
1st Author's Affiliation Department of Electrical Engineering, Graduate School of Engineering()
2nd Author's Name Michihiko SUHARA
2nd Author's Affiliation Department of Electronic and Electrical Engineering, Graduate School of Engineering and Science, Tokyo Metropolitan University
3rd Author's Name Tsugunori OKUMURA
3rd Author's Affiliation Department of Electronic and Electrical Engineering, Graduate School of Engineering and Science, Tokyo Metropolitan University
Date 2007-02-01
Paper # ED2006-240,SDM2006-228
Volume (vol) vol.106
Number (no) 520
Page pp.pp.-
#Pages 6
Date of Issue