Presentation | 2007-02-01 Physics-Based SPICE Modeling of Triple Barrier Resonant Tunneling Diodes Naoya ASAOKA, Michihiko SUHARA, Tsugunori OKUMURA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | To formulate SPICE model of triple barrier resonant tunneling diodes, analytical continuous function of current-voltage characteristics is derived based on physics of electron transportation in hetrostructure. The formulated analytical function showed very good match to the previously reported experimental current-voltage characteristics of GaAs, InP, and SiGe based triple barrier resonant tunneling diodes and is suitable for evaluating resonant level width and voltage-energy conversion factor. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | triple barrier resonant tunneling diodes / SPICE modeling |
Paper # | ED2006-240,SDM2006-228 |
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Committee | ED |
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Conference Date | 2007/1/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Physics-Based SPICE Modeling of Triple Barrier Resonant Tunneling Diodes |
Sub Title (in English) | |
Keyword(1) | triple barrier resonant tunneling diodes |
Keyword(2) | SPICE modeling |
1st Author's Name | Naoya ASAOKA |
1st Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering() |
2nd Author's Name | Michihiko SUHARA |
2nd Author's Affiliation | Department of Electronic and Electrical Engineering, Graduate School of Engineering and Science, Tokyo Metropolitan University |
3rd Author's Name | Tsugunori OKUMURA |
3rd Author's Affiliation | Department of Electronic and Electrical Engineering, Graduate School of Engineering and Science, Tokyo Metropolitan University |
Date | 2007-02-01 |
Paper # | ED2006-240,SDM2006-228 |
Volume (vol) | vol.106 |
Number (no) | 520 |
Page | pp.pp.- |
#Pages | 6 |
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