| Presentation | 2007-01-19 High-Voltage High-Frequency (>10MHz) Class-E Amplifier Circuit Using a GaN-HEMT Wataru SAITO, Tomokazu DOMON, Kunio TSUDA, Ichiro OMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN-HEMTs can realize high-voltage and ultra-low on-resistance due to high critical electric field and high electron mobility in 2DEG, and are attractive for the power switching device in motor driving systems and power supply systems. The device capacitance can be reduced, because the chip area can be shrunken by ultra-low specific on-resistance. Therefore GaN-HEMTs can operate at high-voltage and high-frequency condition, in which the conventional Si power device cannot be applied. The GaN-HEMT with the gate width of 3mm was fabricated and obtained the breakdown voltage of 380V, the on-resistance of 2mΩcm^2 and the maximum drain current of 1.9A. A 13.56MHz class-E amplifier circuit was demonstrated using the fabricated device and achieved the output power of 13.4W with the power efficiency of 91%. Moreover, a 27.1MHz circuit also achieved the output power of 13.8W with the power efficiency of 89.6%. These results show that high voltage GaN-devices are suitable for high frequency switching applications under high DC input voltages. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN-HEMT / High Voltage / Power Device |
| Paper # | ED2006-237,MW2006-190 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Voltage High-Frequency (>10MHz) Class-E Amplifier Circuit Using a GaN-HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN-HEMT |
| Keyword(2) | High Voltage |
| Keyword(3) | Power Device |
| 1st Author's Name | Wataru SAITO |
| 1st Author's Affiliation | Toshiba Corp. Semiconductor Company() |
| 2nd Author's Name | Tomokazu DOMON |
| 2nd Author's Affiliation | Toshiba Business and Life Service |
| 3rd Author's Name | Kunio TSUDA |
| 3rd Author's Affiliation | Toshiba Corp. R&D Center |
| 4th Author's Name | Ichiro OMURA |
| 4th Author's Affiliation | Toshiba Corp. Semiconductor Company |
| Date | 2007-01-19 |
| Paper # | ED2006-237,MW2006-190 |
| Volume (vol) | vol.106 |
| Number (no) | 459 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |