| Presentation | 2007-01-19 Current Collapse of Insulated-gate GaN-HEMT Masahito KANAMURA, Toshihiro OHKI, Kenji IMANISHI, Kohzou MAKIYAMA, Naoya OKAMOTO, Naoki KARA, Toshihide KIKKAWA, Kazukiyo JOSHIN, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A state-of-the-art n-GaN/n-AlGaN/GaN MIS-HEMTs with Si_3N_4 insulating layer were fabricated on a S.I.-SiC substrate. The elimination of current collapse for MIS-HEMT was realized by the optimization of Si_3N_4 synthesis condition. The current collapse free MIS-HEMT shows the high PAE value of 66%. The single chip GaN MIS-HEMT amplifier operated at 50V achieves a high output power of 147W at 2.5GHz. We also shows the high stability of GaN MIS-HEMT under the gate bias stress of 10V for 24 hours. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaNHEMT / Base Station / Current collapse / MIS / Si_3N_4 |
| Paper # | ED2006-236,MW2006-189 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Current Collapse of Insulated-gate GaN-HEMT |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaNHEMT |
| Keyword(2) | Base Station |
| Keyword(3) | Current collapse |
| Keyword(4) | MIS |
| Keyword(5) | Si_3N_4 |
| 1st Author's Name | Masahito KANAMURA |
| 1st Author's Affiliation | Fujitsu Limited, Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Toshihiro OHKI |
| 2nd Author's Affiliation | Fujitsu Limited, Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Kenji IMANISHI |
| 3rd Author's Affiliation | Fujitsu Limited, Fujitsu Laboratories Ltd. |
| 4th Author's Name | Kohzou MAKIYAMA |
| 4th Author's Affiliation | Fujitsu Limited, Fujitsu Laboratories Ltd. |
| 5th Author's Name | Naoya OKAMOTO |
| 5th Author's Affiliation | Fujitsu Limited, Fujitsu Laboratories Ltd. |
| 6th Author's Name | Naoki KARA |
| 6th Author's Affiliation | Fujitsu Limited, Fujitsu Laboratories Ltd. |
| 7th Author's Name | Toshihide KIKKAWA |
| 7th Author's Affiliation | Fujitsu Limited, Fujitsu Laboratories Ltd. |
| 8th Author's Name | Kazukiyo JOSHIN |
| 8th Author's Affiliation | Fujitsu Limited, Fujitsu Laboratories Ltd. |
| Date | 2007-01-19 |
| Paper # | ED2006-236,MW2006-189 |
| Volume (vol) | vol.106 |
| Number (no) | 459 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |