| Presentation | 2007-01-19 A Normally-Off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits the threshold voltage of 1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (R_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Si substrate / hole injection / conductivity modulation / high power switching device / low specific on-state resistance / high breakdown voltage |
| Paper # | ED2006-235,MW2006-188 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Normally-Off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Si substrate |
| Keyword(3) | hole injection |
| Keyword(4) | conductivity modulation |
| Keyword(5) | high power switching device |
| Keyword(6) | low specific on-state resistance |
| Keyword(7) | high breakdown voltage |
| 1st Author's Name | Yasuhiro Uemoto |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Masahiro Hikita |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Hiroaki Ueno |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Hisayoshi Matsuo |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Hidetoshi Ishida |
| 5th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 6th Author's Name | Manabu Yanagihara |
| 6th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 7th Author's Name | Tetsuzo Ueda |
| 7th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 8th Author's Name | Tsuyoshi Tanaka |
| 8th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 9th Author's Name | Daisuke Ueda |
| 9th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| Date | 2007-01-19 |
| Paper # | ED2006-235,MW2006-188 |
| Volume (vol) | vol.106 |
| Number (no) | 459 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |