| Presentation | 2007-01-19 Improvement of Breakdown Voltage in AlGaN/GaN/AlGaN Double-Heterojunction FET with AlN Buffer Layer Hisayoshi MATSUO, Hiroaki UENO, Tetsuzo UEDA, Tsuyoshi TANAKA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN-based compound semiconductors are promising for future power switching devices because of the high breakdown field with high saturation drift velocity. However, aiming at the practical use, further reduction of the off-state leakage current and increase of the breakdown voltage are strongly desired. In this paper, we report the AlGaN/GaN/AlGaN double-heterojunction (DH) transistors with high breakdown voltage. The AlN buffer layer drastically reduce the off-state leakage current and increase the breakdown voltage compared with conventional single-heterojunction (SH) FET. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN heterojunction field effect transistor / double-heterojunction / power device / high breakdown voltage / low leakage current |
| Paper # | ED2006-234,MW2006-187 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of Breakdown Voltage in AlGaN/GaN/AlGaN Double-Heterojunction FET with AlN Buffer Layer |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN heterojunction field effect transistor |
| Keyword(2) | double-heterojunction |
| Keyword(3) | power device |
| Keyword(4) | high breakdown voltage |
| Keyword(5) | low leakage current |
| 1st Author's Name | Hisayoshi MATSUO |
| 1st Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Hiroaki UENO |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Tetsuzo UEDA |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Tsuyoshi TANAKA |
| 4th Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd. |
| Date | 2007-01-19 |
| Paper # | ED2006-234,MW2006-187 |
| Volume (vol) | vol.106 |
| Number (no) | 459 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |