| Presentation | 2007-01-19 High-Quality InAlN/GaN HEMT Epi-Wafers grown on Si (111) Substrate by Metalorganic Chemical Vapor Deposition Noriyuki WATANABE, Haruki YOKOYAMA, Masanobu HIROKI, Yasuhiro ODA, Takuma YAGI, Takashi KOBAYASHI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We successfully fabricated high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surface and abrupt heterointerface. Electron mobility of about 1,200 and over 1,800cm^2/V・s are obtained for InAlN/GaN heterostructures without and with AlN interlayer, respectively. These mobility values are the highest ones ever reported for InAlN/GaN grown on Si substrates. DC characteristics of HEMT with 1g=0.6μm showed good pinch-off characteristics regardless of whether or not there was an AlN interlayer. The value of Idss was around 1A/mm, and the maximum gm was about 200mS/mm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / InAlN / Si substrate / MOCVD / HEMT |
| Paper # | ED2006-233,MW2006-186 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Quality InAlN/GaN HEMT Epi-Wafers grown on Si (111) Substrate by Metalorganic Chemical Vapor Deposition |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | InAlN |
| Keyword(3) | Si substrate |
| Keyword(4) | MOCVD |
| Keyword(5) | HEMT |
| 1st Author's Name | Noriyuki WATANABE |
| 1st Author's Affiliation | NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation() |
| 2nd Author's Name | Haruki YOKOYAMA |
| 2nd Author's Affiliation | NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation |
| 3rd Author's Name | Masanobu HIROKI |
| 3rd Author's Affiliation | NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation |
| 4th Author's Name | Yasuhiro ODA |
| 4th Author's Affiliation | NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation |
| 5th Author's Name | Takuma YAGI |
| 5th Author's Affiliation | NTT Advanced Technology Corporation |
| 6th Author's Name | Takashi KOBAYASHI |
| 6th Author's Affiliation | NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation |
| Date | 2007-01-19 |
| Paper # | ED2006-233,MW2006-186 |
| Volume (vol) | vol.106 |
| Number (no) | 459 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |