| Presentation | 2007-01-19 Schottky-Wrap-Gate Controlled AlGaN/GaN Nanowire FETs Takahiro TAMURA, Junji KOTANI, Seiya KASAI, Tamotsu HASHIZUME, |
|||
|---|---|---|---|---|
| PDF Download Page |  PDF download Page Link |
|||
| Abstract(in Japanese) | (See Japanese page) | |||
| Abstract(in English) | Schottky wrap gate (WPG) controlled AlGaN/GaN nanowire FETs were fabricated and characterized. The devices with channel width less than 500nm showed V_ | shift toward a positive bias direction. A 2D potential simulation predicted lateral field effect from the mesa-edge in addition to the normal gate field, resulting in the V_ | shift. However, the V_ | shift obtained experimentally was much larger than the calculated one, probably due to unexpected depletion of channel associated with process-induced defects. |
| Keyword(in Japanese) | (See Japanese page) | |||
| Keyword(in English) | GaN / AlGaN / schottky wrap gate (WPG) / HEMT / threshold voltage control | |||
| Paper # | ED2006-232,MW2006-185 | |||
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2007/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Schottky-Wrap-Gate Controlled AlGaN/GaN Nanowire FETs |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | schottky wrap gate (WPG) |
| Keyword(4) | HEMT |
| Keyword(5) | threshold voltage control |
| 1st Author's Name | Takahiro TAMURA |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University:Graduate School of Information Science and Technology() |
| 2nd Author's Name | Junji KOTANI |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University:Graduate School of Information Science and Technology |
| 3rd Author's Name | Seiya KASAI |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University:Graduate School of Information Science and Technology |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University:Graduate School of Information Science and Technology |
| Date | 2007-01-19 |
| Paper # | ED2006-232,MW2006-185 |
| Volume (vol) | vol.106 |
| Number (no) | 459 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |