| Presentation | 2007-01-19 A 0/20-dB Step Attenuator Using GaAs-HBT Compatible, AC-Coupled, Stack-Type Base-Collector Diode Switches Kazuya YAMAMOTO, Miyo MIYASHITA, Nobuyuki OGAWA, Takeshi MIURA, Teruyuki SHIMURA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes a GaAs-HBT compatible, base-collector diode step attenuator for 3.5-GHz band wireless applications. The attenuator uses an AC-coupled, stacked type diode switch topology featuring high power handling capability with low bias current operation. Compared to a conventional diode switch topology, the topology can improve the capability of more than 6dB with the same bias current. In addition, successful incorporation of a shunt diode lineanzer into the attenuator gives the IM3 distortion improvement of more than 7dB in the high power ranging from 16dBm to 18dBm in the 20-dB attenuation mode. Measurement results are as follows: 1.4/20-dB insertion loss, and more than 18-dBm power handling capability (P_<0.2dB>), and low bias current of 3.8/6.8mA in thru/attenuation modes at 5V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Wireless communication / GaAs / HBT / Diode / Step Attenuator |
| Paper # | ED2006-231,MW2006-184 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 0/20-dB Step Attenuator Using GaAs-HBT Compatible, AC-Coupled, Stack-Type Base-Collector Diode Switches |
| Sub Title (in English) | |
| Keyword(1) | Wireless communication |
| Keyword(2) | GaAs |
| Keyword(3) | HBT |
| Keyword(4) | Diode |
| Keyword(5) | Step Attenuator |
| 1st Author's Name | Kazuya YAMAMOTO |
| 1st Author's Affiliation | High-Frequency and Optaical Device Works, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Miyo MIYASHITA |
| 2nd Author's Affiliation | High-Frequency and Optaical Device Works, Mitsubishi Electric Corporation |
| 3rd Author's Name | Nobuyuki OGAWA |
| 3rd Author's Affiliation | High-Frequency and Optaical Device Works, Mitsubishi Electric Corporation |
| 4th Author's Name | Takeshi MIURA |
| 4th Author's Affiliation | High-Frequency and Optaical Device Works, Mitsubishi Electric Corporation |
| 5th Author's Name | Teruyuki SHIMURA |
| 5th Author's Affiliation | High-Frequency and Optaical Device Works, Mitsubishi Electric Corporation |
| Date | 2007-01-19 |
| Paper # | ED2006-231,MW2006-184 |
| Volume (vol) | vol.106 |
| Number (no) | 459 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |