| Presentation | 2007-01-19 A 3.5 GHz Low Distortion High Powr FET Using GaAs On-chip Harmonic Tuning Circuit Seiki GOTO, Tetsuo KUNII, Akira INOUE, Toshikazu OUE, Masaki KOHNO, Tomoki OKU, Takahide ISHIKAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An ultra low distortion class-F power amplifier for 3.5GHz base stations of broadband access systems is presented. The feature of this amplifier is an GaAs on-chip input 2nd harmonic tuning circuit placed in front of each FET unit cell to achieve the linearity under class AB operating conditions by the accurate control of input 2nd harmonic impedance. With the proposed FET, a single-chip multi-cell FET for verification exhibits a low distortion of a -51dBc ACPR and a 19% PAE with a 11.8-dB associated gain at a 10-dB back-off output power level under a 3.5-GHz 3GPP W-CDMA signal test. This ACPR corresponds to a 10-dB reduction in ACPR of a conventional FET. In addition, a 25W power amplifier with two proposed FET chips successfully achieves a 1.5% EVM (Error Vector Magnitude) at an output power of 34.6dBm under a 3.5-GHz WiMAX (IEEE 802.16a) compliant OFDM signal test, where the output power is a 10-dB back-off level. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | power amplifier / transistor / distortion / microwave communication / GaAs / WiMAX |
| Paper # | ED2006-228,MW2006-181 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 3.5 GHz Low Distortion High Powr FET Using GaAs On-chip Harmonic Tuning Circuit |
| Sub Title (in English) | |
| Keyword(1) | power amplifier |
| Keyword(2) | transistor |
| Keyword(3) | distortion |
| Keyword(4) | microwave communication |
| Keyword(5) | GaAs |
| Keyword(6) | WiMAX |
| 1st Author's Name | Seiki GOTO |
| 1st Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Tetsuo KUNII |
| 2nd Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| 3rd Author's Name | Akira INOUE |
| 3rd Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| 4th Author's Name | Toshikazu OUE |
| 4th Author's Affiliation | Wave Technology Inc. |
| 5th Author's Name | Masaki KOHNO |
| 5th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| 6th Author's Name | Tomoki OKU |
| 6th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| 7th Author's Name | Takahide ISHIKAWA |
| 7th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| Date | 2007-01-19 |
| Paper # | ED2006-228,MW2006-181 |
| Volume (vol) | vol.106 |
| Number (no) | 459 |
| Page | pp.pp.- |
| #Pages | 6 |
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