| Presentation | 2007/1/18 Laser annealing treatment and the CL characteristics of SrGa_2S_4:Eu thin film phosphor : The low temperature process and effect Takashi HARAKAWA, Yuko ARAI, Toshiaki SEINO, Hiroko KOMINAMI, Kazuhiko HARA, Yoichiro NAKANISHI, Yoshinori HATANAKA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We focused attention on SrGa_2S_4:Eu phosphor that shows the strong green emission and color coordinate (0.26, 0.69). We tried to prepare SrGa_2S_4:Eu thin film phosphors by the deposition of SrS:Eu and Ga_2S_3 on quartz substrate using two EB evaporation. Thin film phosphor will be able to be expected to be lower resistance and higher definition than powder phosphor. The luminance of 58,000cd/m^2 was obtained from the thin film phosphor annealed at 850℃ for 30 minutes in Ar+H_2S(1%) after deposition under excitation with 10kV and 60μA/cm^2. However, the annealing of the thin films at 850℃ is not allowed, because it is thought that the heat resistance of glass substrate is about 500℃. So the low temperature process by using KrF excimer laser (248nm), so-called laser annealing, was applied to improve the luminescence and the crystallinity of the thin film phosphors. CL luminance of 2,000cd/m^2 was obtained from the thin film annealed by thermal annealing at 500℃ and laser annealing under excitation at 4kV, 60μA/cm^2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SrGa_2S_4:Eu / high intensity / two electron beam evaporation / thin film phosphor / low resistance / high efficiency / stability / laser annealing / CL / KrF laser / low temperature process |
| Paper # | EID2006-54 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2007/1/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Laser annealing treatment and the CL characteristics of SrGa_2S_4:Eu thin film phosphor : The low temperature process and effect |
| Sub Title (in English) | |
| Keyword(1) | SrGa_2S_4:Eu |
| Keyword(2) | high intensity |
| Keyword(3) | two electron beam evaporation |
| Keyword(4) | thin film phosphor |
| Keyword(5) | low resistance |
| Keyword(6) | high efficiency |
| Keyword(7) | stability |
| Keyword(8) | laser annealing |
| Keyword(9) | CL |
| Keyword(10) | KrF laser |
| Keyword(11) | low temperature process |
| 1st Author's Name | Takashi HARAKAWA |
| 1st Author's Affiliation | Shizuoka univ.() |
| 2nd Author's Name | Yuko ARAI |
| 2nd Author's Affiliation | JSW |
| 3rd Author's Name | Toshiaki SEINO |
| 3rd Author's Affiliation | JSW |
| 4th Author's Name | Hiroko KOMINAMI |
| 4th Author's Affiliation | Shizuoka univ. |
| 5th Author's Name | Kazuhiko HARA |
| 5th Author's Affiliation | Shizuoka univ. |
| 6th Author's Name | Yoichiro NAKANISHI |
| 6th Author's Affiliation | Shizuoka univ. |
| 7th Author's Name | Yoshinori HATANAKA |
| 7th Author's Affiliation | Department of Electronics and Information Engineering, Aichi University of Technology |
| Date | 2007/1/18 |
| Paper # | EID2006-54 |
| Volume (vol) | vol.106 |
| Number (no) | 499 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |