Presentation 2007/1/19
A 45nm High Performance Bulk Logic Platform Technology (CMOS6) using Ultra High NA (1.07) Immersion Lithography with Hybrid Dual-Damascene Structure and Porous Low-k BEOL
H. Nii, T. Sanuki, Y. Okayama, K. Ota, T. Iwamoto, T. Fujimaki, T. Kimura, R. Watanabe, T. Komoda, A. Eiho, K. Aikawa, H. Yamaguchi, R. Morimoto, K. Ohshima, T. Yokoyama, T. Matsumoto, K. Hachimine, Y. Sogo, S. Shino, S. Kanai, T. Yamazaki, S. Takahashi, H. Maeda, T. Iwata, K. Ohno, Y. Takegawa, A. Oishi, M. Togo, K. Fukasaku, Y. Takasu, H. Yamasaki, H. Inokuma, K. Matsuo, T. Sato, M. Nakazawa, T. Katagiri, K. Nakazawa, T. Shinyama, T. Tetsuka, S. Fujita, Y. Kagawa, K. Nagaoka, S. Muramatsu, S. Iwasa, S. Mimotogi, K. Yoshida, K. Sunouchi, M. Iwai, M. Saito, M. Ikeda, Y. Enomoto, H. Naruse, K. Imai, S. Yamada, N. Nagashima, T. Kuwata, F. Matsuoka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We present the state-of-the-art 45nm high performance bulk logic platform technology which utilizes, for the first time in the industry, ultra high NA (1.07) immersion lithography to realize highly down-scaled chip size. Fully renovated MOSFET integration scheme which features reversed extension and SD diffusion formation is established to meet Vt roll-off requirement with excellent transistor performance of Ion=1100uA/um for nFET and Ion=700uA/um for PFET at Ioff=100nA/um. Also, we achieved excellent BEOL reliability and manufacturability by implementing hybrid dual-damascene (DD) structure with porous low-k film (keff=2.7).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 45nm CMOS / System LSI / Immersion lithography / UHDRSAM / Hybrid dual-damascene
Paper # SDM2006-219
Date of Issue

Conference Information
Committee SDM
Conference Date 2007/1/19(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 45nm High Performance Bulk Logic Platform Technology (CMOS6) using Ultra High NA (1.07) Immersion Lithography with Hybrid Dual-Damascene Structure and Porous Low-k BEOL
Sub Title (in English)
Keyword(1) 45nm CMOS
Keyword(2) System LSI
Keyword(3) Immersion lithography
Keyword(4) UHDRSAM
Keyword(5) Hybrid dual-damascene
1st Author's Name H. Nii
1st Author's Affiliation System LSI Division 1, Toshiba Corporation()
2nd Author's Name T. Sanuki
2nd Author's Affiliation System LSI Division 1, Toshiba Corporation
3rd Author's Name Y. Okayama
3rd Author's Affiliation System LSI Division 1, Toshiba Corporation
4th Author's Name K. Ota
4th Author's Affiliation SONY Corporation
5th Author's Name T. Iwamoto
5th Author's Affiliation NEC Electronics Corporation
6th Author's Name T. Fujimaki
6th Author's Affiliation System LSI Division 1, Toshiba Corporation
7th Author's Name T. Kimura
7th Author's Affiliation System LSI Division 1, Toshiba Corporation
8th Author's Name R. Watanabe
8th Author's Affiliation System LSI Division 1, Toshiba Corporation
9th Author's Name T. Komoda
9th Author's Affiliation System LSI Division 1, Toshiba Corporation
10th Author's Name A. Eiho
10th Author's Affiliation System LSI Division 1, Toshiba Corporation
11th Author's Name K. Aikawa
11th Author's Affiliation System LSI Division 1, Toshiba Corporation
12th Author's Name H. Yamaguchi
12th Author's Affiliation System LSI Division 1, Toshiba Corporation
13th Author's Name R. Morimoto
13th Author's Affiliation SONY Corporation
14th Author's Name K. Ohshima
14th Author's Affiliation SONY Corporation
15th Author's Name T. Yokoyama
15th Author's Affiliation SONY Corporation
16th Author's Name T. Matsumoto
16th Author's Affiliation SONY Corporation
17th Author's Name K. Hachimine
17th Author's Affiliation SONY Corporation
18th Author's Name Y. Sogo
18th Author's Affiliation SONY Corporation
19th Author's Name S. Shino
19th Author's Affiliation SONY Corporation
20th Author's Name S. Kanai
20th Author's Affiliation SONY Corporation
21th Author's Name T. Yamazaki
21th Author's Affiliation SONY Corporation
22th Author's Name S. Takahashi
22th Author's Affiliation SONY Corporation
23th Author's Name H. Maeda
23th Author's Affiliation SONY Corporation
24th Author's Name T. Iwata
24th Author's Affiliation SONY Corporation
25th Author's Name K. Ohno
25th Author's Affiliation SONY Corporation
26th Author's Name Y. Takegawa
26th Author's Affiliation System LSI Division 1, Toshiba Corporation
27th Author's Name A. Oishi
27th Author's Affiliation System LSI Division 1, Toshiba Corporation
28th Author's Name M. Togo
28th Author's Affiliation NEC Electronics Corporation
29th Author's Name K. Fukasaku
29th Author's Affiliation SONY Corporation
30th Author's Name Y. Takasu
30th Author's Affiliation Process and Manufacturing Engineering Center, Toshiba Corporation
31th Author's Name H. Yamasaki
31th Author's Affiliation Process and Manufacturing Engineering Center, Toshiba Corporation
32th Author's Name H. Inokuma
32th Author's Affiliation Process and Manufacturing Engineering Center, Toshiba Corporation
33th Author's Name K. Matsuo
33th Author's Affiliation Process and Manufacturing Engineering Center, Toshiba Corporation
34th Author's Name T. Sato
34th Author's Affiliation Process and Manufacturing Engineering Center, Toshiba Corporation
35th Author's Name M. Nakazawa
35th Author's Affiliation SONY Corporation
36th Author's Name T. Katagiri
36th Author's Affiliation SONY Corporation
37th Author's Name K. Nakazawa
37th Author's Affiliation SONY Corporation
38th Author's Name T. Shinyama
38th Author's Affiliation SONY Corporation
39th Author's Name T. Tetsuka
39th Author's Affiliation SONY Corporation
40th Author's Name S. Fujita
40th Author's Affiliation SONY Corporation
41th Author's Name Y. Kagawa
41th Author's Affiliation SONY Corporation
42th Author's Name K. Nagaoka
42th Author's Affiliation SONY Corporation
43th Author's Name S. Muramatsu
43th Author's Affiliation NEC Electronics Corporation
44th Author's Name S. Iwasa
44th Author's Affiliation Process and Manufacturing Engineering Center, Toshiba Corporation
45th Author's Name S. Mimotogi
45th Author's Affiliation Process and Manufacturing Engineering Center, Toshiba Corporation
46th Author's Name K. Yoshida
46th Author's Affiliation System LSI Division 1, Toshiba Corporation
47th Author's Name K. Sunouchi
47th Author's Affiliation System LSI Division 1, Toshiba Corporation
48th Author's Name M. Iwai
48th Author's Affiliation System LSI Division 1, Toshiba Corporation
49th Author's Name M. Saito
49th Author's Affiliation SONY Corporation
50th Author's Name M. Ikeda
50th Author's Affiliation NEC Electronics Corporation
51th Author's Name Y. Enomoto
51th Author's Affiliation SONY Corporation
52th Author's Name H. Naruse
52th Author's Affiliation Process and Manufacturing Engineering Center, Toshiba Corporation
53th Author's Name K. Imai
53th Author's Affiliation NEC Electronics Corporation
54th Author's Name S. Yamada
54th Author's Affiliation System LSI Division 1, Toshiba Corporation
55th Author's Name N. Nagashima
55th Author's Affiliation SONY Corporation
56th Author's Name T. Kuwata
56th Author's Affiliation NEC Electronics Corporation
57th Author's Name F. Matsuoka
57th Author's Affiliation System LSI Division 1, Toshiba Corporation
Date 2007/1/19
Paper # SDM2006-219
Volume (vol) vol.106
Number (no) 504
Page pp.pp.-
#Pages 4
Date of Issue