Presentation	2007-01-19 High-f_ GaN HEMT with High Breakdown Voltage for Millimeter-wave Applications Kozo MAKIYAMA, Toshihiro OHKI, Kenji IMANISHI, Masahito KANAMURA, Naoki HARA, Toshihide KIKKAWA,
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Abstract(in English)	The GaN high electron mobility transistors (GaN-HEMTs) have achieved a high performance as a high-power device for wireless base station applications. A lot of research has been reported recently on improvements in its performance as a high-frequency device. To obtain a high-gain millimeter-wave power amplifier "with high reliability", both a maximum frequency of oscillation (f_) and a high BV_ are important. In the previous reports, mainly a high current cut off frequency (f_T) was discussed to verify high drift velocity of GaN. High BV_ of the Schottky-gate GaN-HEMT is an important feature in improving the efficiency. However there have been no reports on a high f_ Schottky-gate device with a BV_ of over 100V. In this research, we demonstrated a high f_ of 210GHz with a BV_ of over 100V using a novel Y-shaped Schottky-gate and a SiN/n-GaN-cap structure, for the first time.
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Keyword(in English)	Millimeter-wave / Gate breakdown voltage / f_ / GaN HEMT
Paper #	ED2006-239,MW2006-192
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Committee	MW
Conference Date	2007/1/10(1days)
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Paper Information
Registration To	Microwaves (MW)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	High-f_ GaN HEMT with High Breakdown Voltage for Millimeter-wave Applications
Sub Title (in English)
Keyword(1)	Millimeter-wave
Keyword(2)	Gate breakdown voltage
Keyword(3)	f_
Keyword(4)	GaN HEMT
1st Author's Name	Kozo MAKIYAMA
1st Author's Affiliation	Fujitsu Limited:Fujitsu Laboratories Limited()
2nd Author's Name	Toshihiro OHKI
2nd Author's Affiliation	Fujitsu Limited:Fujitsu Laboratories Limited
3rd Author's Name	Kenji IMANISHI
3rd Author's Affiliation	Fujitsu Limited:Fujitsu Laboratories Limited
4th Author's Name	Masahito KANAMURA
4th Author's Affiliation	Fujitsu Limited:Fujitsu Laboratories Limited
5th Author's Name	Naoki HARA
5th Author's Affiliation	Fujitsu Laboratories Limited
6th Author's Name	Toshihide KIKKAWA
6th Author's Affiliation	Fujitsu Limited:Fujitsu Laboratories Limited
Date	2007-01-19
Paper #	ED2006-239,MW2006-192
Volume (vol)	vol.106
Number (no)	460
Page	pp.pp.-
#Pages	5
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