Presentation | 2007-01-19 A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations Isao TAKENAKA, Kohji ISHIKURA, Hidemasa TAKAHASHI, Kouichi HASEGAWA, Takashi UEDA, Toshimichi KURIHARA, Kazunori ASANO, Naotaka IWATA, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A low distortion Doherty high-power amplifier has been developed for cellular base stations. The amplifier delivered 330W-saturated output-power at 2.14GHz with a pair of 28V operated 150W GaAs heterojunction field-effect-transistors. Utilizing the distortion cancellation effect between the main and the peak amplifiers in Doherty configuration, it demonstrated low third order intermodulation of -37dBc with a high drain efficiency of 42% at an output power of 49dBm around 6dB back-off level under the two-carrier wideband code division multiple access (W-CDMA) signals of 2.135GHz and 2.145GHz. In addition, we proposed the evaluation techniques to obtain each AM-AM and AM-PM characteristics of the main and the peak amplifiers in an operating Doherty amplifier, and experimentally proved the distortion cancellation effect in the GaAs FET Doherty amplifier. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Distortion cancellation / Doherty amplifier / efficiency / heterojunction field-effect-transistor / high power / wideband code division multiple access (W-CDMA) |
Paper # | ED2006-227,MW2006-180 |
Date of Issue |
Conference Information | |
Committee | MW |
---|---|
Conference Date | 2007/1/10(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Microwaves (MW) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations |
Sub Title (in English) | |
Keyword(1) | Distortion cancellation |
Keyword(2) | Doherty amplifier |
Keyword(3) | efficiency |
Keyword(4) | heterojunction field-effect-transistor |
Keyword(5) | high power |
Keyword(6) | wideband code division multiple access (W-CDMA) |
1st Author's Name | Isao TAKENAKA |
1st Author's Affiliation | Compound Semiconductor Device Division, NEC Electronics Corporation() |
2nd Author's Name | Kohji ISHIKURA |
2nd Author's Affiliation | Compound Semiconductor Device Division, NEC Electronics Corporation |
3rd Author's Name | Hidemasa TAKAHASHI |
3rd Author's Affiliation | Compound Semiconductor Device Division, NEC Electronics Corporation |
4th Author's Name | Kouichi HASEGAWA |
4th Author's Affiliation | Compound Semiconductor Device Division, NEC Electronics Corporation |
5th Author's Name | Takashi UEDA |
5th Author's Affiliation | Compound Semiconductor Device Division, NEC Electronics Corporation |
6th Author's Name | Toshimichi KURIHARA |
6th Author's Affiliation | Compound Semiconductor Device Division, NEC Electronics Corporation |
7th Author's Name | Kazunori ASANO |
7th Author's Affiliation | Compound Semiconductor Device Division, NEC Electronics Corporation |
8th Author's Name | Naotaka IWATA |
8th Author's Affiliation | Compound Semiconductor Device Division, NEC Electronics Corporation |
Date | 2007-01-19 |
Paper # | ED2006-227,MW2006-180 |
Volume (vol) | vol.106 |
Number (no) | 460 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |