Presentation 2007-01-19
A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations
Isao TAKENAKA, Kohji ISHIKURA, Hidemasa TAKAHASHI, Kouichi HASEGAWA, Takashi UEDA, Toshimichi KURIHARA, Kazunori ASANO, Naotaka IWATA,
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Abstract(in English) A low distortion Doherty high-power amplifier has been developed for cellular base stations. The amplifier delivered 330W-saturated output-power at 2.14GHz with a pair of 28V operated 150W GaAs heterojunction field-effect-transistors. Utilizing the distortion cancellation effect between the main and the peak amplifiers in Doherty configuration, it demonstrated low third order intermodulation of -37dBc with a high drain efficiency of 42% at an output power of 49dBm around 6dB back-off level under the two-carrier wideband code division multiple access (W-CDMA) signals of 2.135GHz and 2.145GHz. In addition, we proposed the evaluation techniques to obtain each AM-AM and AM-PM characteristics of the main and the peak amplifiers in an operating Doherty amplifier, and experimentally proved the distortion cancellation effect in the GaAs FET Doherty amplifier.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Distortion cancellation / Doherty amplifier / efficiency / heterojunction field-effect-transistor / high power / wideband code division multiple access (W-CDMA)
Paper # ED2006-227,MW2006-180
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Conference Date 2007/1/10(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations
Sub Title (in English)
Keyword(1) Distortion cancellation
Keyword(2) Doherty amplifier
Keyword(3) efficiency
Keyword(4) heterojunction field-effect-transistor
Keyword(5) high power
Keyword(6) wideband code division multiple access (W-CDMA)
1st Author's Name Isao TAKENAKA
1st Author's Affiliation Compound Semiconductor Device Division, NEC Electronics Corporation()
2nd Author's Name Kohji ISHIKURA
2nd Author's Affiliation Compound Semiconductor Device Division, NEC Electronics Corporation
3rd Author's Name Hidemasa TAKAHASHI
3rd Author's Affiliation Compound Semiconductor Device Division, NEC Electronics Corporation
4th Author's Name Kouichi HASEGAWA
4th Author's Affiliation Compound Semiconductor Device Division, NEC Electronics Corporation
5th Author's Name Takashi UEDA
5th Author's Affiliation Compound Semiconductor Device Division, NEC Electronics Corporation
6th Author's Name Toshimichi KURIHARA
6th Author's Affiliation Compound Semiconductor Device Division, NEC Electronics Corporation
7th Author's Name Kazunori ASANO
7th Author's Affiliation Compound Semiconductor Device Division, NEC Electronics Corporation
8th Author's Name Naotaka IWATA
8th Author's Affiliation Compound Semiconductor Device Division, NEC Electronics Corporation
Date 2007-01-19
Paper # ED2006-227,MW2006-180
Volume (vol) vol.106
Number (no) 460
Page pp.pp.-
#Pages 6
Date of Issue