Presentation 2007-01-29
40Gbps Waveguide Photodiode
Masaharu Nakaji, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa,
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Abstract(in English) We have developed 40Gbps waveguide-photodiodes for flip-chip bonding. A high sensitivity over 0.7A/W has been realized by the asymmetric waveguide structure in the wide wavelength range of 1.27μm to 1.58μm. The 3dB-down bandwidth is over 50GHz even at average photocurrent of 4mA and PD operation bias voltage of -2.4V.
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Keyword(in English) asymmetric waveguide / flip-chip bonding / 40Gbps / waveguide-photodiode
Paper # PN2006-55,OPE2006-137,LQE2006-126
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Committee PN
Conference Date 2007/1/22(1days)
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Registration To Photonic Network (PN)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 40Gbps Waveguide Photodiode
Sub Title (in English)
Keyword(1) asymmetric waveguide
Keyword(2) flip-chip bonding
Keyword(3) 40Gbps
Keyword(4) waveguide-photodiode
1st Author's Name Masaharu Nakaji
1st Author's Affiliation Mitsubishi Electric Corp. High Frequency & Optical Device Works R&D Dept.()
2nd Author's Name Eitaro Ishimura
2nd Author's Affiliation Mitsubishi Electric Corp. High Frequency & Optical Device Works R&D Dept.
3rd Author's Name Chikara Watatani
3rd Author's Affiliation Optoelectronics Device dept.
4th Author's Name Toshitaka Aoyagi
4th Author's Affiliation Mitsubishi Electric Corp. High Frequency & Optical Device Works R&D Dept.
5th Author's Name Takahide Ishikawa
5th Author's Affiliation Mitsubishi Electric Corp. High Frequency & Optical Device Works R&D Dept.
Date 2007-01-29
Paper # PN2006-55,OPE2006-137,LQE2006-126
Volume (vol) vol.106
Number (no) 513
Page pp.pp.-
#Pages 4
Date of Issue