Presentation 2007-01-29
1.3-μm GaInNAs TQW Ridge-Waveguide Lasers
K. Nakahara, K. Adachi, J. Kasai, T. Kitatani, M. Aoki,
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Abstract(in English) The GaInNAs has an ideal band-lineup as compared with conventional long-wavelenth acitve materials. We investigated TQW (triple quantum well) structure in terms of high speed operations. In order to improve the crystallinity of GaInNAs-TQW, an Al-free MBE eptaxial system was developed and a TQW structure was optimized. As a result, low threshold current density of 468A/cm^2 is obtained, which is almost the same as the lowest one grown by MBE. Moreover, it is demonstrated that the record low threshold current of 4.3mA is achieved in long-wavelength, 1.29μm, GaInNAs-TQW RWG lasers. In addition, 40-Gb/s direct modulation of the laser is confirmed at 5℃.
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Keyword(in English) GaInNAs / GaAs / MBE / Al / threshold current density / threhold current / RWG laser
Paper # PN2006-54,OPE2006-136,LQE2006-125
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Committee PN
Conference Date 2007/1/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1.3-μm GaInNAs TQW Ridge-Waveguide Lasers
Sub Title (in English)
Keyword(1) GaInNAs
Keyword(2) GaAs
Keyword(3) MBE
Keyword(4) Al
Keyword(5) threshold current density
Keyword(6) threhold current
Keyword(7) RWG laser
1st Author's Name K. Nakahara
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd.()
2nd Author's Name K. Adachi
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
3rd Author's Name J. Kasai
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
4th Author's Name T. Kitatani
4th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
5th Author's Name M. Aoki
5th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
Date 2007-01-29
Paper # PN2006-54,OPE2006-136,LQE2006-125
Volume (vol) vol.106
Number (no) 513
Page pp.pp.-
#Pages 4
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