| Presentation | 2006/12/7 Improvement of SiO_2/4H-SiC Interface Properties by High-Pressure H_2O Vapor Annealing Daisuke TAKEDA, Hiroshi YANO, Tomoaki HATAYAMA, Yukiharu URAOKA, Takashi FUYUKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We performed high-pressure H_2O vapor annealing on 4H-SiC n-MOS capacitors to control SiO_2/4H-SiC interface properties. High-pressure H_2O vapor annealing was performed at 270～420℃ at a pressure of 1.31～1.67MPa. Effective negative fixed oxide charge decreased with increasing anneal temperature in the case annealed with Al gate electrodes. However, it increased with increasing anneal temperature in the case annealed without Al gate electrodes. The effect of annealing was much larger on the C-face than that of the Si-face. Interface state densities near the conduction band edge were decreased for the samples annealed at 420℃ under 1.67MPa compared to other samples annealed with lower temperatures and pressures, especially on the C-face n-MOS capacitors. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / high-pressure H_2O vapor annealing / fixed oxide charge / interface states |
| Paper # | SDM2006-208 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/12/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of SiO_2/4H-SiC Interface Properties by High-Pressure H_2O Vapor Annealing |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | high-pressure H_2O vapor annealing |
| Keyword(3) | fixed oxide charge |
| Keyword(4) | interface states |
| 1st Author's Name | Daisuke TAKEDA |
| 1st Author's Affiliation | Nara Institute of Science and Technology() |
| 2nd Author's Name | Hiroshi YANO |
| 2nd Author's Affiliation | Nara Institute of Science and Technology |
| 3rd Author's Name | Tomoaki HATAYAMA |
| 3rd Author's Affiliation | Nara Institute of Science and Technology |
| 4th Author's Name | Yukiharu URAOKA |
| 4th Author's Affiliation | Nara Institute of Science and Technology |
| 5th Author's Name | Takashi FUYUKI |
| 5th Author's Affiliation | Nara Institute of Science and Technology |
| Date | 2006/12/7 |
| Paper # | SDM2006-208 |
| Volume (vol) | vol.106 |
| Number (no) | 417 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |