| Presentation | 2006/12/7 Characterization of interfaces between ultrathin high-k dielectric films and Si(001) by high-resolution RBS/ERD Kaoru NAKAJIMA, Ming ZHAO, Motofumi SUZUKI, Kenji KIMURA, Masashi UEMATSU, Kazuyoshi TORII, Satoshi KAMIYAMA, Yasuo NARA, Keisaku YAMADA, Kiichi Tachi, Kuniyuki Kakushima, Hiroshi Iwai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Depth profiling of the interfaces between ultrathin high-k dielectric films and Si(001) using high-resolution RBS/ERD has been reported. HfO_2 /SiO_2/Si(001) were annealed in dry oxygen at various temperatures, and compositional depth profiles were measured by high-resolution RBS. Growth of the inter facial SiO_2 layer and simultaneous surface accumulation of Si were observed. Depth pro filing of hydrogen in La_2O_3/Si(001) was done with high-resolution ERD. Hydrogen existed around the interface for the as-deposited sample, while significant reduction of hydrogen was observed for those annealed in nitrogen at temperatures higher than 500℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | high-k gate dielectric / HfO_2 / La_2O_3 / interface / high-resolution RBS / high-resolution ERD |
| Paper # | SDM2006-207 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/12/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of interfaces between ultrathin high-k dielectric films and Si(001) by high-resolution RBS/ERD |
| Sub Title (in English) | |
| Keyword(1) | high-k gate dielectric |
| Keyword(2) | HfO_2 |
| Keyword(3) | La_2O_3 |
| Keyword(4) | interface |
| Keyword(5) | high-resolution RBS |
| Keyword(6) | high-resolution ERD |
| 1st Author's Name | Kaoru NAKAJIMA |
| 1st Author's Affiliation | Department of Micro Engineering, Kyoto University() |
| 2nd Author's Name | Ming ZHAO |
| 2nd Author's Affiliation | Department of Micro Engineering, Kyoto University |
| 3rd Author's Name | Motofumi SUZUKI |
| 3rd Author's Affiliation | Department of Micro Engineering, Kyoto University |
| 4th Author's Name | Kenji KIMURA |
| 4th Author's Affiliation | Department of Micro Engineering, Kyoto University |
| 5th Author's Name | Masashi UEMATSU |
| 5th Author's Affiliation | NTT Basic Research Laboratories |
| 6th Author's Name | Kazuyoshi TORII |
| 6th Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. |
| 7th Author's Name | Satoshi KAMIYAMA |
| 7th Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. |
| 8th Author's Name | Yasuo NARA |
| 8th Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. |
| 9th Author's Name | Keisaku YAMADA |
| 9th Author's Affiliation | Nanotechnology Research Center, Waseda University |
| 10th Author's Name | Kiichi Tachi |
| 10th Author's Affiliation | Frontier Collaborative Research Center, Tokyo Institute of Technology |
| 11th Author's Name | Kuniyuki Kakushima |
| 11th Author's Affiliation | Frontier Collaborative Research Center, Tokyo Institute of Technology |
| 12th Author's Name | Hiroshi Iwai |
| 12th Author's Affiliation | Frontier Collaborative Research Center, Tokyo Institute of Technology |
| Date | 2006/12/7 |
| Paper # | SDM2006-207 |
| Volume (vol) | vol.106 |
| Number (no) | 417 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |