Presentation 2006/12/7
Crystallization of Germanium Films by Laser Crystallization
Nobuyuki ANDOH, Toshiyuki SAMESHIMA, Seiiciro HIGASHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Amorphous germanium films formed by PECVD method were crystallized by pulsed laser irradiation. Crystalline volume ratio was 0.8 for the film thickness of 6nm. Analysis of the spectra of electron spin resonance resulted that the spin density of laser crystallized germanium films was low of 3×10^<16>cm^<-3>. Photo and dark conductivity of crystallized germanium was high of 1.9×10^<-1>S/cm and 13S/cm, respectively.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) germanium / laser crystallization / crystalline volume ratio / defect state
Paper # SDM2006-205
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Conference Information
Committee SDM
Conference Date 2006/12/7(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Crystallization of Germanium Films by Laser Crystallization
Sub Title (in English)
Keyword(1) germanium
Keyword(2) laser crystallization
Keyword(3) crystalline volume ratio
Keyword(4) defect state
1st Author's Name Nobuyuki ANDOH
1st Author's Affiliation Tokyo University of Agriculture and Technology()
2nd Author's Name Toshiyuki SAMESHIMA
2nd Author's Affiliation Tokyo University of Agriculture and Technology
3rd Author's Name Seiiciro HIGASHI
3rd Author's Affiliation Hiroshima University
Date 2006/12/7
Paper # SDM2006-205
Volume (vol) vol.106
Number (no) 417
Page pp.pp.-
#Pages 5
Date of Issue