Presentation | 2006/12/7 Crystallization of Germanium Films by Laser Crystallization Nobuyuki ANDOH, Toshiyuki SAMESHIMA, Seiiciro HIGASHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Amorphous germanium films formed by PECVD method were crystallized by pulsed laser irradiation. Crystalline volume ratio was 0.8 for the film thickness of 6nm. Analysis of the spectra of electron spin resonance resulted that the spin density of laser crystallized germanium films was low of 3×10^<16>cm^<-3>. Photo and dark conductivity of crystallized germanium was high of 1.9×10^<-1>S/cm and 13S/cm, respectively. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | germanium / laser crystallization / crystalline volume ratio / defect state |
Paper # | SDM2006-205 |
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Committee | SDM |
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Conference Date | 2006/12/7(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Crystallization of Germanium Films by Laser Crystallization |
Sub Title (in English) | |
Keyword(1) | germanium |
Keyword(2) | laser crystallization |
Keyword(3) | crystalline volume ratio |
Keyword(4) | defect state |
1st Author's Name | Nobuyuki ANDOH |
1st Author's Affiliation | Tokyo University of Agriculture and Technology() |
2nd Author's Name | Toshiyuki SAMESHIMA |
2nd Author's Affiliation | Tokyo University of Agriculture and Technology |
3rd Author's Name | Seiiciro HIGASHI |
3rd Author's Affiliation | Hiroshima University |
Date | 2006/12/7 |
Paper # | SDM2006-205 |
Volume (vol) | vol.106 |
Number (no) | 417 |
Page | pp.pp.- |
#Pages | 5 |
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