| Presentation | 2006/12/1 Emission of Terahertz Radiation at Room Temperature from an InGaP/InGaAs/GaAs Plasmon-Resonant Photomixer with a Resonance-Enhanced Vertical Cavity Structure Mitsuhiro HANABE, Shinya KANEKO, Yahya Moubarak MEZIANI, Taiichi OTSUJI, Eiichi SANO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have designed and fabricated our original terahertz plasmon-resonant photomixer incorporating doubly interdigitated grating gates and a vertical cavity into an InGaP/InGaAs/GaAs high-electron mobility transistor (HEMT) structure. Photoresponses to a single continuous-wave (CW) 1.5-μm laser and to 4.0-THz photomixed dual CW lasers were first measured at room temperature, showing extraordinary plasmon resonant peaks reflecting self oscillation and injection-locked oscillation, respectively. Furthermore, electromagnetic response to 1.5-μm, 80-fs impulsive photoexcitation was measured by using reflective electrooptic sampling (REOS). We successfully observed stimulated emission of terahertz radiation at room temperature. Its Fourier spectrum clearly reflects the photo-induced plasmon resonant modes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Terahertz / Plasmon Resonance / Photomixer / High-Electron-Mobility Transistor (HEMT) |
| Paper # | ED2006-198 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/12/1(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Emission of Terahertz Radiation at Room Temperature from an InGaP/InGaAs/GaAs Plasmon-Resonant Photomixer with a Resonance-Enhanced Vertical Cavity Structure |
| Sub Title (in English) | |
| Keyword(1) | Terahertz |
| Keyword(2) | Plasmon Resonance |
| Keyword(3) | Photomixer |
| Keyword(4) | High-Electron-Mobility Transistor (HEMT) |
| 1st Author's Name | Mitsuhiro HANABE |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Shinya KANEKO |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Yahya Moubarak MEZIANI |
| 3rd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 4th Author's Name | Taiichi OTSUJI |
| 4th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 5th Author's Name | Eiichi SANO |
| 5th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2006/12/1 |
| Paper # | ED2006-198 |
| Volume (vol) | vol.106 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |