| Presentation | 2006/12/1 Fabrication and Millimeter-wave Characterization of Semiconductor Klystron Device Using Two-Dimensional Electron Gas Jun TAKEUCHI, Yohei IWAHASHI, Masahiro ASADA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | As a possible terahertz (THz) amplifier device, a three-terminal device using velocity modulation of two dimensional electron gas is proposed and fabricated. The principle of this device is the same as that of microwave vacuum tube, Klystron. Theoretical analysis shows that the transconductance g_m has a peak in the THz range. The device was fabricated with GaInAs/InAlAs HEMT layer structure, and g_m was measured in the millimeter wave range, as a first-step preliminary experiment. Measured g_m in the millimeter wave range increases with frequency in agreement with theory. From this result, high g_m is expected in the THz range. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | terahertz device / HEMT structure / velocity modulation / Klystron |
| Paper # | ED2006-196 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/12/1(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Millimeter-wave Characterization of Semiconductor Klystron Device Using Two-Dimensional Electron Gas |
| Sub Title (in English) | |
| Keyword(1) | terahertz device |
| Keyword(2) | HEMT structure |
| Keyword(3) | velocity modulation |
| Keyword(4) | Klystron |
| 1st Author's Name | Jun TAKEUCHI |
| 1st Author's Affiliation | Tokyo Institute of Technology() |
| 2nd Author's Name | Yohei IWAHASHI |
| 2nd Author's Affiliation | Tokyo Institute of Technology |
| 3rd Author's Name | Masahiro ASADA |
| 3rd Author's Affiliation | Tokyo Institute of Technology:CREST, Japan Science and Technology Agency |
| Date | 2006/12/1 |
| Paper # | ED2006-196 |
| Volume (vol) | vol.106 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |