| Presentation | 2006/12/1 Semiconductor Devices for Frequency Conversion Using the Doppler Effect Jongsuck BAE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Semiconductor devices for frequency conversion of electromagnetic waves utilizing a photo-excited electron-hole plasma boundary moving at a relativistic speed, has been discussed. Numerical simulations performed at terahertz frequencies have shown that the frequency converter could be a potential source to generate intense and coherent terahertz waves. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Frequency conversion / Doppler effect / Optical excitation / Semiconductor plasma |
| Paper # | ED2006-195 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/12/1(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Semiconductor Devices for Frequency Conversion Using the Doppler Effect |
| Sub Title (in English) | |
| Keyword(1) | Frequency conversion |
| Keyword(2) | Doppler effect |
| Keyword(3) | Optical excitation |
| Keyword(4) | Semiconductor plasma |
| 1st Author's Name | Jongsuck BAE |
| 1st Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology() |
| Date | 2006/12/1 |
| Paper # | ED2006-195 |
| Volume (vol) | vol.106 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |