Presentation 2006/12/1
Development of LSI failure analysis technique using Laser THz Emiison Microscope
Masatsugu YAMASHITA, Chiko OTANI,
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Abstract(in English) We proposed and developed a laser THz emission microscope (LTEM) as a novel tool for inspecting electrical failures in semiconductor devices. LTEM provides an image reflecting the photocurrent distribution in LSI chip by scanning it with fs laser pulses. By comparing LTEM images of a normal chip and a damaged one, we observed the difference in the LTEM image near the damaged area. Here, we report the experimental result on non-biased MOSFETs embedded in a test element group. We found that the LTEM images of damaged samples changed from those of normal samples under non-biased condition. This indicates that the LTEM is a potential tool for inspecting electrical failures in circuits.
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Keyword(in English) THz wave / fs laser / LSI / failure analysis
Paper # ED2006-191
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Committee ED
Conference Date 2006/12/1(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of LSI failure analysis technique using Laser THz Emiison Microscope
Sub Title (in English)
Keyword(1) THz wave
Keyword(2) fs laser
Keyword(3) LSI
Keyword(4) failure analysis
1st Author's Name Masatsugu YAMASHITA
1st Author's Affiliation RIKEN()
2nd Author's Name Chiko OTANI
2nd Author's Affiliation RIKEN
Date 2006/12/1
Paper # ED2006-191
Volume (vol) vol.106
Number (no) 403
Page pp.pp.-
#Pages 5
Date of Issue