| Presentation | 2006/12/1 Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves Hiroshi TAKAHASHI, Tatsuya INOUE, Toshihiko MAEMOTO, Shigehiko SASA, Masataka INOUE, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated and characterized Sb-based diodes for detecting subterahertz waves. These devices were made on InAs/AlSb/Al_xGa_<1-x>Sb/GaSb heterostructures grown by molecular beam epitaxy. We grew several structures by changing the Al composition, x, of Al_xGa_<1-x>Sb and the thickness, y, of the AlSb and characterized the I-V characteristics. The sensitivity, γ, of the diodes was estimated from the I-V characteristics. As a result, the maximum value of 4.4 V^<-1> was obtained in the device for x=0.15 and y=1nm, which was two times as good as that of y=2nm. In addition, the negative resistance appeared in the forward bias shifted towards low voltage side as the x value increased resulting in better rectification characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | subteraherz / terahertz / diode / Sb-based / negative resistance |
| Paper # | ED2006-187 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2006/12/1(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves |
| Sub Title (in English) | |
| Keyword(1) | subteraherz |
| Keyword(2) | terahertz |
| Keyword(3) | diode |
| Keyword(4) | Sb-based |
| Keyword(5) | negative resistance |
| 1st Author's Name | Hiroshi TAKAHASHI |
| 1st Author's Affiliation | Osaka Institute of Technology() |
| 2nd Author's Name | Tatsuya INOUE |
| 2nd Author's Affiliation | Osaka Institute of Technology |
| 3rd Author's Name | Toshihiko MAEMOTO |
| 3rd Author's Affiliation | Osaka Institute of Technology |
| 4th Author's Name | Shigehiko SASA |
| 4th Author's Affiliation | Osaka Institute of Technology |
| 5th Author's Name | Masataka INOUE |
| 5th Author's Affiliation | Osaka Institute of Technology |
| Date | 2006/12/1 |
| Paper # | ED2006-187 |
| Volume (vol) | vol.106 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |