| Presentation | 2006/12/1 Fabrication of hot electron transistor controlled by insulated gate Akira SUWA, Takashi HASEGAWA, Takahiro HINO, Yasuyuki MIYAMOTO, Kazuhito FURUYA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The base layer of a conventional hot electron transistor was eliminated to minimize the scattering. In previous trial, electron emission from the emitter was controlled by positively biased Schottky gate electrodes located both sides of the emitter mesa and low current density and gate leakage current were observed. To solve such problems, we fabricated hot electron transistor controlled by insulated gate. Collector current modulation by gate bias was observed at room temperature. The current density was 160kA/cm^2 and the thermionic emission injected from the collector to the gate was suppressed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | hot electron transistor / electron beam lithography / insulated gate |
| Paper # | ED2006-186 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/12/1(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of hot electron transistor controlled by insulated gate |
| Sub Title (in English) | |
| Keyword(1) | hot electron transistor |
| Keyword(2) | electron beam lithography |
| Keyword(3) | insulated gate |
| 1st Author's Name | Akira SUWA |
| 1st Author's Affiliation | Physical Electron. Tokyo Institute of Technology() |
| 2nd Author's Name | Takashi HASEGAWA |
| 2nd Author's Affiliation | Physical Electron. Tokyo Institute of Technology |
| 3rd Author's Name | Takahiro HINO |
| 3rd Author's Affiliation | Physical Electron. Tokyo Institute of Technology |
| 4th Author's Name | Yasuyuki MIYAMOTO |
| 4th Author's Affiliation | Physical Electron. Tokyo Institute of Technology:JST-CREST |
| 5th Author's Name | Kazuhito FURUYA |
| 5th Author's Affiliation | Physical Electron. Tokyo Institute of Technology:JST-CREST |
| Date | 2006/12/1 |
| Paper # | ED2006-186 |
| Volume (vol) | vol.106 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |