| Presentation | 2006/12/1 Research and Development of Millimeter-Wave GaN Transistors Masataka HIGASHIWAKI, Takashi MIMURA, Toshiaki MATSUI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN heterostructure field-effect transistors (HFETs) are promising not only as high-power and high-breakdown-voltage devices but also as high-frequency ones, because the saturation electron velocity in GaN is relatively high. By using three characteristic techniques to improve high-frequency characteristics of GaN HFETs, which are (1) high-Al-composition and extremely thin barrier layers, (2) Cat-CVD SiN passivation, and (3) T-shaped short gates defined by electron-beam lithography, we have succeeded in suppressing short-channel effects in short-gate HFETs with a gate length of less than 0.1μm. Here, we report on device characteristics of short-gate AlGaN/GaN and InAlN/GaN HFETs, which are being developed for applications in the frequency range above 50GHz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN / InAlN/GaN / heterostructure field-effect transistors (HFETs) / catalytic chemical vapor deposition (Cat-CVD) / millimeter-wave |
| Paper # | ED2006-184 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/12/1(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Research and Development of Millimeter-Wave GaN Transistors |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | InAlN/GaN |
| Keyword(3) | heterostructure field-effect transistors (HFETs) |
| Keyword(4) | catalytic chemical vapor deposition (Cat-CVD) |
| Keyword(5) | millimeter-wave |
| 1st Author's Name | Masataka HIGASHIWAKI |
| 1st Author's Affiliation | National Institute of Information and Communications Technology (NICT)() |
| 2nd Author's Name | Takashi MIMURA |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology (NICT):Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Toshiaki MATSUI |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| Date | 2006/12/1 |
| Paper # | ED2006-184 |
| Volume (vol) | vol.106 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |