Presentation 2006-11-10
Influence of interfacial built-in potential on the open circuit voltage of CuPc/Fullerene double layered photovoltaic device
Hirokazu Nakamichi, Eiji ITOH, Keiichi MIYAIRI,
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Abstract(in English) We investigated the surface potential built across the CuPc/C_<60> interface and electrode/semiconductor interface as a function of the film thickness of organic semiconductor layers by conventional Kelvin prove technique. CuPc donates electrons to ITO electrode, whereas C_<60> accepts electrons from Al and ITO electrodes. The electron accepting material C_<60> accepts electrons from the electron donating material CuPc at CuPc/C_<60> interface, and this tendency is enhanced by photoillumination. The thicknesses of charged interfacial layer, presented here, are 10-20nm. It was also found from I-V characteristics that the direction of internal electric field at CuPc/C_<60> interface was opposite to the direction of the photocurrent. We therefore concluded that the energetic difference between HOMO of CuPc and LUMO of C_<60> is more important for the origin of open circuit voltage (V_) than the internal electric field, which have been considered as the origin of V_ in inorganic photovoltaic devices.
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Keyword(in English) Surface potential / Open circuit voltage / Photovoltaic device / Phthalocyanine / Fullerene
Paper # OME2006-98
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Committee OME
Conference Date 2006/11/3(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Influence of interfacial built-in potential on the open circuit voltage of CuPc/Fullerene double layered photovoltaic device
Sub Title (in English)
Keyword(1) Surface potential
Keyword(2) Open circuit voltage
Keyword(3) Photovoltaic device
Keyword(4) Phthalocyanine
Keyword(5) Fullerene
1st Author's Name Hirokazu Nakamichi
1st Author's Affiliation Faculty of Engineering, Shinshu University()
2nd Author's Name Eiji ITOH
2nd Author's Affiliation Faculty of Engineering, Shinshu University
3rd Author's Name Keiichi MIYAIRI
3rd Author's Affiliation Faculty of Engineering, Shinshu University
Date 2006-11-10
Paper # OME2006-98
Volume (vol) vol.106
Number (no) 339
Page pp.pp.-
#Pages 6
Date of Issue