Presentation | 2006/11/2 Effects of Ru under layer for CoPtCr-SiO_2 magnetic recording tape media(Head materials & recording media,The 8th Asian Symposium on Information Storage Technology (ASIST-8)) Hiroki FUJIURA, Anuar MOHD, Satoshi MATSUNUMA, Shigeki NAKAGAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | CoPtCr-SiO_2/Ru films were fabricated using FTS system aiming for the film for magnetic recording tape media. The Ar gas pressure in fabrication of magnetic layer and Ru underlayer had an influence on magnetic properties. Ru (001) texture was degraded at high Ar gas pressure in fabrication of underlayer. Coercivity and squareness ratio of the film were 4.3 kOe and 0.78, respectively. TEM observation implies that some CoPtCr columns with their diameter of 10nm, were grown on a Ru column with relatively large diameter of 20-50nm. Segregated structure was observed in the large agglomerated grains by SiO_2 grain boundary. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Magnetic recording tape / CoPtCr-SiO_2 / Ru underlayer / Facing Targets Sputtering |
Paper # | MR2006-41 |
Date of Issue |
Conference Information | |
Committee | MR |
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Conference Date | 2006/11/2(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Magnetic Recording (MR) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effects of Ru under layer for CoPtCr-SiO_2 magnetic recording tape media(Head materials & recording media,The 8th Asian Symposium on Information Storage Technology (ASIST-8)) |
Sub Title (in English) | |
Keyword(1) | Magnetic recording tape |
Keyword(2) | CoPtCr-SiO_2 |
Keyword(3) | Ru underlayer |
Keyword(4) | Facing Targets Sputtering |
1st Author's Name | Hiroki FUJIURA |
1st Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology() |
2nd Author's Name | Anuar MOHD |
2nd Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
3rd Author's Name | Satoshi MATSUNUMA |
3rd Author's Affiliation | Hitachi Maxell, Ltd. |
4th Author's Name | Shigeki NAKAGAWA |
4th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
Date | 2006/11/2 |
Paper # | MR2006-41 |
Volume (vol) | vol.106 |
Number (no) | 335 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |