Presentation 2006/11/2
Effects of Ru under layer for CoPtCr-SiO_2 magnetic recording tape media(Head materials & recording media,The 8th Asian Symposium on Information Storage Technology (ASIST-8))
Hiroki FUJIURA, Anuar MOHD, Satoshi MATSUNUMA, Shigeki NAKAGAWA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) CoPtCr-SiO_2/Ru films were fabricated using FTS system aiming for the film for magnetic recording tape media. The Ar gas pressure in fabrication of magnetic layer and Ru underlayer had an influence on magnetic properties. Ru (001) texture was degraded at high Ar gas pressure in fabrication of underlayer. Coercivity and squareness ratio of the film were 4.3 kOe and 0.78, respectively. TEM observation implies that some CoPtCr columns with their diameter of 10nm, were grown on a Ru column with relatively large diameter of 20-50nm. Segregated structure was observed in the large agglomerated grains by SiO_2 grain boundary.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Magnetic recording tape / CoPtCr-SiO_2 / Ru underlayer / Facing Targets Sputtering
Paper # MR2006-41
Date of Issue

Conference Information
Committee MR
Conference Date 2006/11/2(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Magnetic Recording (MR)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of Ru under layer for CoPtCr-SiO_2 magnetic recording tape media(Head materials & recording media,The 8th Asian Symposium on Information Storage Technology (ASIST-8))
Sub Title (in English)
Keyword(1) Magnetic recording tape
Keyword(2) CoPtCr-SiO_2
Keyword(3) Ru underlayer
Keyword(4) Facing Targets Sputtering
1st Author's Name Hiroki FUJIURA
1st Author's Affiliation Dept. of Physical Electronics, Tokyo Institute of Technology()
2nd Author's Name Anuar MOHD
2nd Author's Affiliation Dept. of Physical Electronics, Tokyo Institute of Technology
3rd Author's Name Satoshi MATSUNUMA
3rd Author's Affiliation Hitachi Maxell, Ltd.
4th Author's Name Shigeki NAKAGAWA
4th Author's Affiliation Dept. of Physical Electronics, Tokyo Institute of Technology
Date 2006/11/2
Paper # MR2006-41
Volume (vol) vol.106
Number (no) 335
Page pp.pp.-
#Pages 4
Date of Issue