| Presentation | 2006-11-10 Formation of high-density nanodots on Si(001)-2°off surface aiming at the formation of high-density Ge nanodots embedded in SiC layer Tetsushi KANEMARU, Tomoaki OGIWARA, Kanji YASUI, Tadashi AKAHANE, Masasuke TAKATA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ge nano-dot structure embedded in SiC is expected for a quantum dot laser in infrared region for optical communication, because the carrier recombination at high efficiency is expected in the Ge dots due to their strong carrier confinement. Formation of high-density nano-dots using monomethylgermane (MMGe) on Si (001)-2°off surface was investigated aiming at the formation of high-density Ge nanodots embedded in SiC layer. The surface reaction and the nano-dot formation were analyzed on atomic scale using scanning tunneling microscopy and reflection high-energy electron diffraction. By the pulse temperature controlled method, which changes the substrate temperature at low and high temperatures alternatively, uniform nanodots of 10^<12> cm^<-2> in density and 6nm in diameter, this dot size enable the quantum effect to occur, were successfully formed. From X-ray photoelectron spectroscopy (XPS), the existence of Ge-Ge and Si-C bonds was confirmed, and in particular the Ge-Ge bonds were confirmed to exist on the surface layer using angle-resolved XPS. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ge nano-dot / STM / XPS / Monomethylgermane (MMGe) |
| Paper # | CPM2006-124 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/11/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of high-density nanodots on Si(001)-2°off surface aiming at the formation of high-density Ge nanodots embedded in SiC layer |
| Sub Title (in English) | |
| Keyword(1) | Ge nano-dot |
| Keyword(2) | STM |
| Keyword(3) | XPS |
| Keyword(4) | Monomethylgermane (MMGe) |
| 1st Author's Name | Tetsushi KANEMARU |
| 1st Author's Affiliation | Department of Electrical Engineering,Nagaoka University of Technology() |
| 2nd Author's Name | Tomoaki OGIWARA |
| 2nd Author's Affiliation | Department of Electrical Engineering,Nagaoka University of Technology |
| 3rd Author's Name | Kanji YASUI |
| 3rd Author's Affiliation | Department of Electrical Engineering,Nagaoka University of Technology |
| 4th Author's Name | Tadashi AKAHANE |
| 4th Author's Affiliation | Department of Electrical Engineering,Nagaoka University of Technology |
| 5th Author's Name | Masasuke TAKATA |
| 5th Author's Affiliation | Department of Electrical Engineering,Nagaoka University of Technology |
| Date | 2006-11-10 |
| Paper # | CPM2006-124 |
| Volume (vol) | vol.106 |
| Number (no) | 336 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |