Presentation 2006-11-10
Thermoelectric performance of deteriorated SiGe thin films : influence from substrate
Akinari MATOBA, Toshio HAYAHIRA, Takahiro TSUDUKI, Kimihiro SASAKI, Youichi OKAMOTO, Jun MORIOTO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We found that SiGe thin films on Si substrate prepared by Ion-Beam Sputtering (IBS) technique showed thermoelectric performance as high as 4.5×10^<-2>Wm^<-1>K^<-2>. However the resistivity of SiGe thin film, which is one of the performance components, may be influenced by the substrate. Whereas, by changing the resistivity of the substrate, we confirmed that resistivity of SiGe was not influenced by the substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Seebeck effect / Ion-beam sputtering / SiGe / SOI
Paper # CPM2006-123
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Committee CPM
Conference Date 2006/11/2(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thermoelectric performance of deteriorated SiGe thin films : influence from substrate
Sub Title (in English)
Keyword(1) Seebeck effect
Keyword(2) Ion-beam sputtering
Keyword(3) SiGe
Keyword(4) SOI
1st Author's Name Akinari MATOBA
1st Author's Affiliation Kanazawa University()
2nd Author's Name Toshio HAYAHIRA
2nd Author's Affiliation Kanazawa University
3rd Author's Name Takahiro TSUDUKI
3rd Author's Affiliation Kanazawa University
4th Author's Name Kimihiro SASAKI
4th Author's Affiliation Kanazawa University
5th Author's Name Youichi OKAMOTO
5th Author's Affiliation National Defense Academy
6th Author's Name Jun MORIOTO
6th Author's Affiliation National Defense Academy
Date 2006-11-10
Paper # CPM2006-123
Volume (vol) vol.106
Number (no) 336
Page pp.pp.-
#Pages 5
Date of Issue