Presentation 2006-11-10
Surface roughness control of SiGe layer deposited by Ion Beam Sputtering toward strained Si fabrication
Jun YAMAMOTO, Yuta SAKAGUCHI, Kimihiro NARUSE, Kimihiro SASAKI,
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Abstract(in English) Strain relaxation SiGe is used for virtual Substrate of Strained Si, which is expected to work on the advanced devices with high mobility channel. The SiGe films were prepared by Ion Beam Sputtering under different ion accelerate voltages, deposited temperature. The relaxation ratio and surface roughness of SiGe was studied in detail. The experiments indicate that fully relaxation SiGe films, whose surface roughness and thickness are 2nm, and 200nm, respectively, would be obtained successfully at 500℃ with the ion accelerate voltage is 500V.
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Keyword(in English) Ion Beam Sputtering / strained Si / Strain Relaxation SiGe
Paper # CPM2006-122
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Committee CPM
Conference Date 2006/11/2(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Surface roughness control of SiGe layer deposited by Ion Beam Sputtering toward strained Si fabrication
Sub Title (in English)
Keyword(1) Ion Beam Sputtering
Keyword(2) strained Si
Keyword(3) Strain Relaxation SiGe
1st Author's Name Jun YAMAMOTO
1st Author's Affiliation Graduate School of Natural Science & Technology, Kanazawa University()
2nd Author's Name Yuta SAKAGUCHI
2nd Author's Affiliation Graduate School of Natural Science & Technology, Kanazawa University
3rd Author's Name Kimihiro NARUSE
3rd Author's Affiliation Graduate School of Natural Science & Technology, Kanazawa University
4th Author's Name Kimihiro SASAKI
4th Author's Affiliation Graduate School of Natural Science & Technology, Kanazawa University
Date 2006-11-10
Paper # CPM2006-122
Volume (vol) vol.106
Number (no) 336
Page pp.pp.-
#Pages 5
Date of Issue