| Presentation | 2006-11-10 Surface roughness control of SiGe layer deposited by Ion Beam Sputtering toward strained Si fabrication Jun YAMAMOTO, Yuta SAKAGUCHI, Kimihiro NARUSE, Kimihiro SASAKI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Strain relaxation SiGe is used for virtual Substrate of Strained Si, which is expected to work on the advanced devices with high mobility channel. The SiGe films were prepared by Ion Beam Sputtering under different ion accelerate voltages, deposited temperature. The relaxation ratio and surface roughness of SiGe was studied in detail. The experiments indicate that fully relaxation SiGe films, whose surface roughness and thickness are 2nm, and 200nm, respectively, would be obtained successfully at 500℃ with the ion accelerate voltage is 500V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ion Beam Sputtering / strained Si / Strain Relaxation SiGe |
| Paper # | CPM2006-122 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/11/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface roughness control of SiGe layer deposited by Ion Beam Sputtering toward strained Si fabrication |
| Sub Title (in English) | |
| Keyword(1) | Ion Beam Sputtering |
| Keyword(2) | strained Si |
| Keyword(3) | Strain Relaxation SiGe |
| 1st Author's Name | Jun YAMAMOTO |
| 1st Author's Affiliation | Graduate School of Natural Science & Technology, Kanazawa University() |
| 2nd Author's Name | Yuta SAKAGUCHI |
| 2nd Author's Affiliation | Graduate School of Natural Science & Technology, Kanazawa University |
| 3rd Author's Name | Kimihiro NARUSE |
| 3rd Author's Affiliation | Graduate School of Natural Science & Technology, Kanazawa University |
| 4th Author's Name | Kimihiro SASAKI |
| 4th Author's Affiliation | Graduate School of Natural Science & Technology, Kanazawa University |
| Date | 2006-11-10 |
| Paper # | CPM2006-122 |
| Volume (vol) | vol.106 |
| Number (no) | 336 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |