| Presentation | 2006-11-09 Preparation of HfN_x thin films by hot-wire method and their barrier properties interposed between Cu interconnects and SiO_2 or SiOC layers Masaru SATO, Mayumi B. TAKEYAMA, Atsushi NOYA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An extremely thin diffusion barrier of low resistivity is required for down-scaled interconnects on low-k insulating materials to reduce the RC signal delay. The requisite of low-temperature preparation is also another issue for preparation of barriers. We propose a new preparation method, in which a sputter-deposited metal film is nitrided by radical species activated by a hot-wire made of W. We applied this method to prepare the extremely thin HfN_x film on SiO_2 or SiOC layer as a barrier against Cu diffusion. The HfN_x barrier of 3～5nm in thickness tolerated annealing at temperatures higher than 500℃ with excellent barrier properties comparable to those of a reactively-sputtered HfN_x film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | interconnect / low resistivity / SiOC / Cu / HfN barrier |
| Paper # | CPM2006-121 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/11/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation of HfN_x thin films by hot-wire method and their barrier properties interposed between Cu interconnects and SiO_2 or SiOC layers |
| Sub Title (in English) | |
| Keyword(1) | interconnect |
| Keyword(2) | low resistivity |
| Keyword(3) | SiOC |
| Keyword(4) | Cu |
| Keyword(5) | HfN barrier |
| 1st Author's Name | Masaru SATO |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering Kitami Institute of Technology() |
| 2nd Author's Name | Mayumi B. TAKEYAMA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering Kitami Institute of Technology |
| 3rd Author's Name | Atsushi NOYA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering Kitami Institute of Technology |
| Date | 2006-11-09 |
| Paper # | CPM2006-121 |
| Volume (vol) | vol.106 |
| Number (no) | 336 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |