| Presentation | 2006-11-09 Properties of Extremely Thin TiN_x Barrier by New Deposition Method with Radical Reaction for Cu Interconnects Mayumi B. TAKEYAMA, Tadayoshi YANAGITA, Atsushi NOYA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For the development of reliable Cu interconnects applicable to 45nm technology node, the realization of an extremely-thin barrier (～5nm) on low-k materials is indispensable for reducing RC time delay in ULSI devices. Simultaneously, an extremely-thin barrier with low resistivity should be deposited at temperatures as low as possible, in order to suppress the degradation of low-k materials. In the present study, we investigated a new deposition method of extremely-thin barrier using nitriding by radical species activated by W-wire. This method brings about the formation of the extremely-thin TiN barrier of low resistivity without substrate heating. Also, the obtained TiN layer with 3～5nm thickness has a good barrier properties without structural change and intermixing at every interface. We can demonstrate that this method is one of the effective deposition methods for an extremely-thin barrier applicable to highly reliable Cu metallization technology in the 45nm node or beyond. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu interconnects / diffusion barrier / radical reaction / low-k |
| Paper # | CPM2006-120 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/11/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Properties of Extremely Thin TiN_x Barrier by New Deposition Method with Radical Reaction for Cu Interconnects |
| Sub Title (in English) | |
| Keyword(1) | Cu interconnects |
| Keyword(2) | diffusion barrier |
| Keyword(3) | radical reaction |
| Keyword(4) | low-k |
| 1st Author's Name | Mayumi B. TAKEYAMA |
| 1st Author's Affiliation | Faculty of Engineering, Kitami institute of technology() |
| 2nd Author's Name | Tadayoshi YANAGITA |
| 2nd Author's Affiliation | Faculty of Engineering, Kitami institute of technology |
| 3rd Author's Name | Atsushi NOYA |
| 3rd Author's Affiliation | Faculty of Engineering, Kitami institute of technology |
| Date | 2006-11-09 |
| Paper # | CPM2006-120 |
| Volume (vol) | vol.106 |
| Number (no) | 336 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |