Presentation | 2006-11-09 Thermal Stability and Morphology of Interfaces in Cu/ZrN/SiOC/Si systems Atsushi NOYA, Masaru SATO, Mayumi B. TAKEYAMA, Eiji AOYAGI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A thin 5-nm-thick ZrN film was applied to a model system of the downscaled Cu interconnect with a SiOC field-insulating layer of low-k material as an extremely thin diffusion barrier. Thermal stability and morphology of interfaces in the Cu/ZrN/SiOC/Si system were examined. Upon annealing at 500℃ for 30 min, the ZrN barrier was fairly stable without intermixing, diffusion and/or reaction at every interface. Exceptionally, increased undulation of the SiOC surface was evident in a local area under TEM observation, which is probably caused by grain growth of ZrN. Absence of sacrifice of the extremely thin barrier owing to solid-phase diffusion, intermixing and/or reaction was evident, indicating that the present ZrN film was a promising material for the extremely thin barrier for forthcoming metallization technology. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | diffusion barrier / ZrN / interfacial layer / nanocrystal film |
Paper # | CPM2006-119 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2006/11/2(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Thermal Stability and Morphology of Interfaces in Cu/ZrN/SiOC/Si systems |
Sub Title (in English) | |
Keyword(1) | diffusion barrier |
Keyword(2) | ZrN |
Keyword(3) | interfacial layer |
Keyword(4) | nanocrystal film |
1st Author's Name | Atsushi NOYA |
1st Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology() |
2nd Author's Name | Masaru SATO |
2nd Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology |
3rd Author's Name | Mayumi B. TAKEYAMA |
3rd Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology |
4th Author's Name | Eiji AOYAGI |
4th Author's Affiliation | Institute for Materials Research, Tohoku University |
Date | 2006-11-09 |
Paper # | CPM2006-119 |
Volume (vol) | vol.106 |
Number (no) | 336 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |