Presentation 2006-11-09
Thermal Stability and Morphology of Interfaces in Cu/ZrN/SiOC/Si systems
Atsushi NOYA, Masaru SATO, Mayumi B. TAKEYAMA, Eiji AOYAGI,
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Abstract(in English) A thin 5-nm-thick ZrN film was applied to a model system of the downscaled Cu interconnect with a SiOC field-insulating layer of low-k material as an extremely thin diffusion barrier. Thermal stability and morphology of interfaces in the Cu/ZrN/SiOC/Si system were examined. Upon annealing at 500℃ for 30 min, the ZrN barrier was fairly stable without intermixing, diffusion and/or reaction at every interface. Exceptionally, increased undulation of the SiOC surface was evident in a local area under TEM observation, which is probably caused by grain growth of ZrN. Absence of sacrifice of the extremely thin barrier owing to solid-phase diffusion, intermixing and/or reaction was evident, indicating that the present ZrN film was a promising material for the extremely thin barrier for forthcoming metallization technology.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) diffusion barrier / ZrN / interfacial layer / nanocrystal film
Paper # CPM2006-119
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Committee CPM
Conference Date 2006/11/2(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thermal Stability and Morphology of Interfaces in Cu/ZrN/SiOC/Si systems
Sub Title (in English)
Keyword(1) diffusion barrier
Keyword(2) ZrN
Keyword(3) interfacial layer
Keyword(4) nanocrystal film
1st Author's Name Atsushi NOYA
1st Author's Affiliation Faculty of Engineering, Kitami Institute of Technology()
2nd Author's Name Masaru SATO
2nd Author's Affiliation Faculty of Engineering, Kitami Institute of Technology
3rd Author's Name Mayumi B. TAKEYAMA
3rd Author's Affiliation Faculty of Engineering, Kitami Institute of Technology
4th Author's Name Eiji AOYAGI
4th Author's Affiliation Institute for Materials Research, Tohoku University
Date 2006-11-09
Paper # CPM2006-119
Volume (vol) vol.106
Number (no) 336
Page pp.pp.-
#Pages 4
Date of Issue