Presentation 2006-11-09
Fabrication of Cr_2O_3 Thin Film by RF Magnetron Sputtering
Takeshi ASADA, Kenjirou NAGASE, Takayuki YAMADA, Nobuyuki IWATA, Hiroshi YAMAMOTO,
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Abstract(in English) We propose application of magnetoelectric (ME) materials. ME material thin films are expected to be current or magnetic source for various nano-device. Adopting ME materials to single flux quantum (SFQ) device can exclude base source current sources. However, such the experimental reports were quite few. It is the reason that the crystal structure of high temperature superconductors or substrates were different from that of ME materials. We focused Cr_2O_3 as the representative among ME materials and its epitaxy for R-cut sapphire and Nb-SrTiO_3 (Nb-STO). The Cr_2O_3 films were prepared by RF magnetron sputtering method. A strong Bragg refection peak from Cr_2O_3 (10-12) was observed on the sapphire substrate. Then the peak intensity and full width at half maximum of rocking curve (10-12) were the largest and the smallest in the sample deposited on 500℃ substrate. The results of surface morphology were showed step and terrace structure. The steps height were 0.31~0.40nm same to that of lattice spacing of (10-12) plane at 550℃. Cr_2O_3 films deposited on STO with the buffer layer of CeO_2 revealed c-axis oriented growth and we expect to obtain the epitaxial multilayered films by optimizing growth condition of CeO_2.
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Keyword(in English) ME effect / SFQ / Cr_2O_3 / epitaxial growth / CeO_2 / Nb-STO
Paper # CPM2006-115
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Committee CPM
Conference Date 2006/11/2(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of Cr_2O_3 Thin Film by RF Magnetron Sputtering
Sub Title (in English)
Keyword(1) ME effect
Keyword(2) SFQ
Keyword(3) Cr_2O_3
Keyword(4) epitaxial growth
Keyword(5) CeO_2
Keyword(6) Nb-STO
1st Author's Name Takeshi ASADA
1st Author's Affiliation College of Science & Technology, Nihon University()
2nd Author's Name Kenjirou NAGASE
2nd Author's Affiliation College of Science & Technology, Nihon University
3rd Author's Name Takayuki YAMADA
3rd Author's Affiliation College of Science & Technology, Nihon University
4th Author's Name Nobuyuki IWATA
4th Author's Affiliation College of Science & Technology, Nihon University
5th Author's Name Hiroshi YAMAMOTO
5th Author's Affiliation College of Science & Technology, Nihon University
Date 2006-11-09
Paper # CPM2006-115
Volume (vol) vol.106
Number (no) 336
Page pp.pp.-
#Pages 6
Date of Issue