Presentation 2006-10-06
Position and Size-controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE
Taihei YAMAGUCHI, Hiroyuki NAOI, Tsutomu ARAKI, Yasushi NANISHI,
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Abstract(in English) We report on the growth of self-aligned InN nano-dots on patterned GaN templates by electron cyclotron resonance plasma-exited molecular beam epitaxy (ECR-MBE). In the fabrication of the self-aligned InN nano-dots, InN was grown by ECR-MBE on GaN templates with reticular patterns of holes, which were prepared by focused ion beam (FIB). The reticular patterns of nano-holes with about a quarter of million pieces were fabricated on the GaN templates using FIB without a mask. The size of InN dots were controlled by varying the hole pitch and growth temperature. Furthermore, the shape of InN dots changed by thermal annealing after the growth. When InN dots were grown with the optimum conditions, each hole has a single dot with uniform sized. We have succeeded in controlling position and size of InN nano-dots array by ECR-MBE on nano-patterned substrates.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ECR-MBE / Quantum dot / Indium nitride / FIB
Paper # ED2006-174,CPM2006-111,LQE2006-78
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Committee LQE
Conference Date 2006/9/28(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Position and Size-controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE
Sub Title (in English)
Keyword(1) ECR-MBE
Keyword(2) Quantum dot
Keyword(3) Indium nitride
Keyword(4) FIB
1st Author's Name Taihei YAMAGUCHI
1st Author's Affiliation Department of Photonics, Ritsumeikan University()
2nd Author's Name Hiroyuki NAOI
2nd Author's Affiliation Center for Promotion of the COE Program, Ritsumeikan University
3rd Author's Name Tsutomu ARAKI
3rd Author's Affiliation Department of Photonics, Ritsumeikan University
4th Author's Name Yasushi NANISHI
4th Author's Affiliation Department of Photonics, Ritsumeikan University:Center for Promotion of the COE Program, Ritsumeikan University
Date 2006-10-06
Paper # ED2006-174,CPM2006-111,LQE2006-78
Volume (vol) vol.106
Number (no) 271
Page pp.pp.-
#Pages 4
Date of Issue