Presentation 2006-10-06
Nitridation of SiC Surface and Characterization by using XPS
Tetsuo YAMAGUCHI, Yoshiki ISHIDA, Chen CHEN, Masataka HAGIHARA, Rinpei HAYASHIBE, Tomohiko YAMAKAMI, Katsuya ABE, Kiichi KAMIMURA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Nitride layers were formed on SiC surface by thermal nitridation or plasma nitridation. The surface was characterized by using XPS. The thickness of the nitride layer increased with increasing nitridation time, and then saturated in several minutes. Extremely thin layer was detected at the SiC surface after the nitridation. The peaks from Si, C, O and N were detected at the SiC surface by XPS measurements. These peaks indicated that the surface layer was consisted of mainly SiON.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SiC / Nitridation / Nitride / MIS / SiN
Paper # ED2006-173,CPM2006-110,LQE2006-77
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Committee LQE
Conference Date 2006/9/28(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Nitridation of SiC Surface and Characterization by using XPS
Sub Title (in English)
Keyword(1) SiC
Keyword(2) Nitridation
Keyword(3) Nitride
Keyword(4) MIS
Keyword(5) SiN
1st Author's Name Tetsuo YAMAGUCHI
1st Author's Affiliation Faculty of Engineering, Shinshu University()
2nd Author's Name Yoshiki ISHIDA
2nd Author's Affiliation Faculty of Engineering, Shinshu University
3rd Author's Name Chen CHEN
3rd Author's Affiliation Faculty of Engineering, Shinshu University
4th Author's Name Masataka HAGIHARA
4th Author's Affiliation Faculty of Engineering, Shinshu University
5th Author's Name Rinpei HAYASHIBE
5th Author's Affiliation Faculty of Engineering, Shinshu University
6th Author's Name Tomohiko YAMAKAMI
6th Author's Affiliation Faculty of Engineering, Shinshu University
7th Author's Name Katsuya ABE
7th Author's Affiliation Faculty of Engineering, Shinshu University
8th Author's Name Kiichi KAMIMURA
8th Author's Affiliation Faculty of Engineering, Shinshu University
Date 2006-10-06
Paper # ED2006-173,CPM2006-110,LQE2006-77
Volume (vol) vol.106
Number (no) 271
Page pp.pp.-
#Pages 4
Date of Issue