| Presentation | 2006-10-06 Impact of acceptor concentration on electronic properties of n-GaN/p-SiC heterojunction for GaN/SiC heterojunction bipolar transistor Koichi AMARI, Jun SUDA, Tsunenobu KIMOTO, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The electrical properties of n^+-GaN/p^+-SiC heterojunction diodes have been investigated by varying the acceptor concentration of p^+-SiC epilayers (N_a) and polytype of SiC (4H- and 6H-SiC). The current-voltage (I-V) characteristics of diodes with N_a～1x10^<19> cm^<-3> were dominated by tunneling-assisted current. The diodes with N_a～1x10^<18> cm^<-3> exhibit excellent characteristics and 6H-SiC may be a better choice from a view point of electron injection into p-SiC base. Compared to previous investigations (N_a<10^<16> cm^<-3>), we could obtain good rectification with p-SiC doped to two-order-of-magnitude higher acceptor concentration. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / SiC / heterojunction / MBE / HBT / EL / diode |
| Paper # | ED2006-172,CPM2006-109,LQE2006-76 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of acceptor concentration on electronic properties of n-GaN/p-SiC heterojunction for GaN/SiC heterojunction bipolar transistor |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | SiC |
| Keyword(3) | heterojunction |
| Keyword(4) | MBE |
| Keyword(5) | HBT |
| Keyword(6) | EL |
| Keyword(7) | diode |
| 1st Author's Name | Koichi AMARI |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Jun SUDA |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Tsunenobu KIMOTO |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2006-10-06 |
| Paper # | ED2006-172,CPM2006-109,LQE2006-76 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |