| Presentation | 2006-10-06 GaN/InAlN/GaN Heterostructure Barrier Varactor Diode Nobuhisa TANUMA, Minoru KUBOTA, Munekazu TAKANO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The capacitance-voltage (C-V) characteristics of In_<0.17>Al_<0.83>N/GaN heterostructure barrier varactors (HBV) grown by metal-organic chemical vapor deposition on a c-oriented sapphire substrate were studied. The favorable material properties of wide-band-gap III-N's are important in realizing the HBVs for frequency triples and distributed line pulse sharpens for practical use. The HBV structure consists of a 10-nm-thick undoped In_<0.17>Al_<0.83>N barrier sandwiched between two undoped GaN layers with a thickness of 5nm. The barrier structure is further sandwiched between two n-GaN (n=5×10^<17> cm^<-3>) layers with respective thicknesses of 500nm and 1μm to form the top and the bottom ohmic contacts. At room temperature, the C-V characteristics show a maximum capacitance C_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / InAlN / Heterostructure Barrier Varactor / HBV |
| Paper # | ED2006-171,CPM2006-108,LQE2006-75 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN/InAlN/GaN Heterostructure Barrier Varactor Diode |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | InAlN |
| Keyword(3) | Heterostructure Barrier Varactor |
| Keyword(4) | HBV |
| 1st Author's Name | Nobuhisa TANUMA |
| 1st Author's Affiliation | Material Science Research Center, Meisei University() |
| 2nd Author's Name | Minoru KUBOTA |
| 2nd Author's Affiliation | Faculty of Electrical Engineering, Meisei University |
| 3rd Author's Name | Munekazu TAKANO |
| 3rd Author's Affiliation | Faculty of Electrical Engineering, Meisei University |
| Date | 2006-10-06 |
| Paper # | ED2006-171,CPM2006-108,LQE2006-75 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |