| Presentation | 2006-10-06 Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor Jun Shimizu, Toshiyuki Takizawa, Tetsuzo Ueda, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have demonstrated highly selective Epitaxial Lateral Overgrowth(ELO) of GaN without any dielectric mask, call as "maskless" ELO, using Dimethylhydrazine(DMHy) as a nitrogen precursor. It is experimentally found that epitaxial GaN growth occurs only from the sidewall of the mesa stripe in spite of no dielectric mask by employing DMHy for Metal Organic Chemical Vapor Deposition(MOCVD). Virtually, no vertical growth is observed on the top of mesa stripes of the GaN, resulting in extremely high lateral-to-vertical growth rate ratio. Note that the lateral growth rate toward <11-20> direction reaches approximately 10μm/h at growth temperature of 880℃. The cross-sectional TEM image shows that the threading dislocation in the maskless ELO area extends only to the <11-20> direction, while the no threading dislocation appears on the (0001) surface. The enhanced selective lateral growth by the use of DMHy increases the area of low threading dislocation and thus it is advantageous for optoelectronic devices such as lasers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Dimethylhydrazine / MOCVD / GaN / ELO |
| Paper # | ED2006-170,CPM2006-107,LQE2006-74 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor |
| Sub Title (in English) | |
| Keyword(1) | Dimethylhydrazine |
| Keyword(2) | MOCVD |
| Keyword(3) | GaN |
| Keyword(4) | ELO |
| 1st Author's Name | Jun Shimizu |
| 1st Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Toshiyuki Takizawa |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Tetsuzo Ueda |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd. |
| Date | 2006-10-06 |
| Paper # | ED2006-170,CPM2006-107,LQE2006-74 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |