Presentation 2006-10-06
Features of Cathodoluminescence from bulk InGaN microcrystals
Hisashi KANIE, Yuji SEMA,
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Abstract(in English) InGaN microcrystals with blue cathodoluminecence were prepared by the two-stage growth method: the nitridation of previously synthesized GaN and indium sulfide by ammonia, and observed under a highly spatially resolved cathodoluminescence equipment attached to an SEM. CL images showed InGaN on an a-plane has a high two-dimensional growth rate and high CL Intensity.
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Keyword(in English) InGaN / GaN / low-voltage phosphor / CL / two-dimensional growth
Paper # ED2006-165,CPM2006-102,LQE2006-69
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Conference Information
Committee LQE
Conference Date 2006/9/28(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Features of Cathodoluminescence from bulk InGaN microcrystals
Sub Title (in English)
Keyword(1) InGaN
Keyword(2) GaN
Keyword(3) low-voltage phosphor
Keyword(4) CL
Keyword(5) two-dimensional growth
1st Author's Name Hisashi KANIE
1st Author's Affiliation Faculty of Industrial Science and Technology, Tokyo University of Science()
2nd Author's Name Yuji SEMA
2nd Author's Affiliation Faculty of Industrial Science and Technology, Tokyo University of Science
Date 2006-10-06
Paper # ED2006-165,CPM2006-102,LQE2006-69
Volume (vol) vol.106
Number (no) 271
Page pp.pp.-
#Pages 4
Date of Issue