| Presentation | 2006-10-06 Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy Masaaki Nakayama, Hiroyasu Tanaka, Masanobu Ando, Toshiya Uemura, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated photoluminescence (PL) properties of a high quality GaN thin film grown by metal-organic vapor phase epitaxy under intense excitation conditions in a wide temperature range from 10 to 300K. It is found that there are two types of PL band peculiar to intense excitation conditions. In a low temperature region below 80K, the PL process is dominated by exciton-exciton scattering, the so-called P emission. On the other hand, in a high temperature region above～120K, a PL band, which is different from the P emission, appears. The energy spacing between the new PL band and the fundamental A exciton linearly increases with an increase in temperature. The energy spacing is estimated to be zero at absolute zero temperature by extrapolation of the temperature dependence. These PL profiles indicate that the PL band observed in the high temperature regime originates from exciton-electron scattering. Furthermore, we have confirmed that the exciton-electron scattering process produces optical gain leading to stimulated emission at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / exciton / photoluminescence / exciton-exciton scattering / exciton-electron scattering / MOVPE |
| Paper # | ED2006-164,CPM2006-101,LQE2006-68 |
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| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | exciton |
| Keyword(3) | photoluminescence |
| Keyword(4) | exciton-exciton scattering |
| Keyword(5) | exciton-electron scattering |
| Keyword(6) | MOVPE |
| 1st Author's Name | Masaaki Nakayama |
| 1st Author's Affiliation | Department of Applied Physics, Graduate School of Engineering, Osaka City University() |
| 2nd Author's Name | Hiroyasu Tanaka |
| 2nd Author's Affiliation | Department of Applied Physics, Graduate School of Engineering, Osaka City University |
| 3rd Author's Name | Masanobu Ando |
| 3rd Author's Affiliation | Optoelectronics Technical Division, Toyoda Gosei Company Limited |
| 4th Author's Name | Toshiya Uemura |
| 4th Author's Affiliation | Optoelectronics Technical Division, Toyoda Gosei Company Limited |
| Date | 2006-10-06 |
| Paper # | ED2006-164,CPM2006-101,LQE2006-68 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |