| Presentation | 2006-10-06 Epitaxial growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN bulk crystals Masaya Ueda, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN and InGaN/GaN multiple quantum well (MQW) are grown on semipolar (11-22) GaN bulk substrates by metalorganic vapor phase epitaxy. The GaN homoepitaxial layer has an atomically flat surface. Optical reflection measurements revealed the polarization anisotropy for the A, B, and C excitons. Free A excitons dominate photoluminescence (PL) spectrum at 10K, accompanied by a weaker, sharp doublet emission due to neutral donor-bound excitons. The InGaN/GaN MQW grown on it involves fast radiative recombination processes; the PL decay monitored at 428nm is fitted with a double exponential curve, which has lifetimes of 46ps and 142ps at 10K. These values are two-orders of magnitude shorter than those in conventional (0001) QWs and can be attributed to the weakened internal electric fields. The emission from the MQW is polarized along the [1-100] direction with a polarization degree of 0.69, due to the low crystal symmetry. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semipolar {11-22} / GaN / InGaN/GaN quantum wells / metalorganic vapor phase epitaxy |
| Paper # | ED2006-162,CPM2006-99,LQE2006-66 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN bulk crystals |
| Sub Title (in English) | |
| Keyword(1) | semipolar {11-22} |
| Keyword(2) | GaN |
| Keyword(3) | InGaN/GaN quantum wells |
| Keyword(4) | metalorganic vapor phase epitaxy |
| 1st Author's Name | Masaya Ueda |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Kazunobu Kojima |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Mitsuru Funato |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Yoichi Kawakami |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 5th Author's Name | Yukio Narukawa |
| 5th Author's Affiliation | Nitride Semiconductor Research Lab. Nichia Corporation |
| 6th Author's Name | Takashi Mukai |
| 6th Author's Affiliation | Nitride Semiconductor Research Lab. Nichia Corporation |
| Date | 2006-10-06 |
| Paper # | ED2006-162,CPM2006-99,LQE2006-66 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |