Presentation | 2006-10-06 Investigation of optical gain of InGaN quantum well lasers emitting at 400 and 470nm Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Ulrich T. Schwarz, Harald Braun, Shinichi Nagahama, Takashi Mukai, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Optical gain spectra were measured for InGaN-based laser diodes (LDs) emitting at 408nm and 470nm (LD 470), by employing the Hakki-Paoli method. The internal loss coefficient was as large as 30cm^<-1> for the LD 470 compared to 25cm^<-1> for LD 408. Moreover, gain saturation was observed at about 490nm just below the lasing threshold, and a gain band appears at higher photon energies for further carrier injection resulting in lasing at 470nm. Spontaneous emission peaks of electroluminescence were measured as a function of injection current density below threshold for both samples. The huge blue shift of the spontaneous emission of LD470 of up to 450meV has contributions not only from the screening of piezoelectric field but also from the band-filling of localized tail states. The blue shift for the LD406 was as small as about 30meV and can be interpreted as a result of the screening by both injected carriers and dopants. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InGaN / laser diodes / optical gain / In fluctuation / internal field |
Paper # | ED2006-161,CPM2006-98,LQE2006-65 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2006/9/28(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Investigation of optical gain of InGaN quantum well lasers emitting at 400 and 470nm |
Sub Title (in English) | |
Keyword(1) | InGaN |
Keyword(2) | laser diodes |
Keyword(3) | optical gain |
Keyword(4) | In fluctuation |
Keyword(5) | internal field |
1st Author's Name | Kazunobu Kojima |
1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
2nd Author's Name | Mitsuru Funato |
2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
3rd Author's Name | Yoichi Kawakami |
3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
4th Author's Name | Ulrich T. Schwarz |
4th Author's Affiliation | Department of Physics, Regensburg University |
5th Author's Name | Harald Braun |
5th Author's Affiliation | Department of Physics, Regensburg University |
6th Author's Name | Shinichi Nagahama |
6th Author's Affiliation | Nitride Semiconductor Research Laboratory, Nichia Corporation |
7th Author's Name | Takashi Mukai |
7th Author's Affiliation | Nitride Semiconductor Research Laboratory, Nichia Corporation |
Date | 2006-10-06 |
Paper # | ED2006-161,CPM2006-98,LQE2006-65 |
Volume (vol) | vol.106 |
Number (no) | 271 |
Page | pp.pp.- |
#Pages | 5 |
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