Presentation | 2006-10-05 Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy Kenichi KOSAKA, Tatsuya FUJISHIMA, Kaoru INOUE, Akihiro HINOKI, Tomoaki YAMADA, Tadayoshi TSUCHIYA, Junjiroh KIKAWA, Shinichi KAMIYA, Akira SUZUKI, Tsutomu ARAKI, Yasushi NANISHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Improvement in performance and reliability of high power RF devices is a key issue for AlGaN/GaN HFETs (Hetero-junction Field Effect Transistors). In this work, we have measured the temperature distribution in AlGaN/GaN HFETs on SiC substrates actually operated around breakdown voltage. Temperature distribution of the HFET was determined using micro-Raman spectroscopy, estimated from Raman shift of GaN E_2 (High) phonon mode. We observed temperature distribution of HFET driven by V_g=-3V (DC) and V_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN/GaN HFETs / high-power operation / Micro-Raman spectroscopy / Temperature distribution |
Paper # | ED2006-159,CPM2006-96,LQE2006-63 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2006/9/28(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy |
Sub Title (in English) | |
Keyword(1) | AlGaN/GaN HFETs |
Keyword(2) | high-power operation |
Keyword(3) | Micro-Raman spectroscopy |
Keyword(4) | Temperature distribution |
1st Author's Name | Kenichi KOSAKA |
1st Author's Affiliation | Dept. of Photonics, Ritsumeikan University() |
2nd Author's Name | Tatsuya FUJISHIMA |
2nd Author's Affiliation | Dept. of Photonics, Ritsumeikan University |
3rd Author's Name | Kaoru INOUE |
3rd Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
4th Author's Name | Akihiro HINOKI |
4th Author's Affiliation | Dept. of Photonics, Ritsumeikan University |
5th Author's Name | Tomoaki YAMADA |
5th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
6th Author's Name | Tadayoshi TSUCHIYA |
6th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
7th Author's Name | Junjiroh KIKAWA |
7th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
8th Author's Name | Shinichi KAMIYA |
8th Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
9th Author's Name | Akira SUZUKI |
9th Author's Affiliation | Res. Org. of Sci. & Eng., Ritsumeikan University:Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
10th Author's Name | Tsutomu ARAKI |
10th Author's Affiliation | Dept. of Photonics, Ritsumeikan University |
11th Author's Name | Yasushi NANISHI |
11th Author's Affiliation | Dept. of Photonics, Ritsumeikan University |
Date | 2006-10-05 |
Paper # | ED2006-159,CPM2006-96,LQE2006-63 |
Volume (vol) | vol.106 |
Number (no) | 271 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |