| Presentation | 2006-10-05 Interface control for GaN-based devices T. Kimura, J. Kotani, H. Kato, M. Tajima, E. Ogawa, C. Mizue, T. Hashizume, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper presents formation and characterization of the interface structures for improvement device performance and stability. First, we propose a surface control process using an ultrathin Al layer for suppressing oxygen impurity from the AlGaN surface. The AlGaN/GaN HEMT with the surface process showed the pronounced reduction of gate leakage currents and the excellent endurance against the temperature and bias stress. Then, we prepared the CN/n-GaN structure by ECRCVD. The deposition of a thin CN layer on GaN brought the reduction of surface potential at the GaN surface. It was also found that the surface resistivity of n-GaN increased after annealing the SiN/CN/n-GaN structure at 1000℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / Schottky / leakage current / operation stability / surface process / oxygen / CN |
| Paper # | ED2006-157,CPM2006-94,LQE2006-61 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Interface control for GaN-based devices |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | Schottky |
| Keyword(4) | leakage current |
| Keyword(5) | operation stability |
| Keyword(6) | surface process |
| Keyword(7) | oxygen |
| Keyword(8) | CN |
| 1st Author's Name | T. Kimura |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | J. Kotani |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | H. Kato |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | M. Tajima |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 5th Author's Name | E. Ogawa |
| 5th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 6th Author's Name | C. Mizue |
| 6th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 7th Author's Name | T. Hashizume |
| 7th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2006-10-05 |
| Paper # | ED2006-157,CPM2006-94,LQE2006-61 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |