| Presentation | 2006-10-05 GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures Kazushi NAKAZAWA, Hiroaki UENO, Hisayoshi MATSUO, Manabu YANAGIHARA, Yasuhiro UEMOTO, Tetsuzo UEDA, Tsuyoshi TANAKA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with high electron mobility. Schottky barrier diodes (SBDs) are indispensable in power switching systems, for which high breakdown voltage are strongly required. However, the improvement of breakdown voltage is limited in case of GaN because of high residual carrier concentration. We have developed a new technique to increase breakdown voltage of vertical GaN SBDs utilizing so-called pseudo-superjunction (PSJ) structures, in which narrow channel and selectively ion-implanted insulating region is alternately stacked. The PSJ structure enables higher breakdown voltages by the relaxation of electric field at the surface together with deeper depletion layers. In addition, the PSJ-SBD enables low on-state voltage keeping the high breakdown voltage owing to relatively high carrier concentration in the channel. The obtained breakdown voltage is over twice as high as that of the conventional SBD with keeping low on-state voltage of 0.93V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Schottky barrier diode (SBD) / vertical structure / breakdown voltage / on-state voltage |
| Paper # | ED2006-156,CPM2006-93,LQE2006-60 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Schottky barrier diode (SBD) |
| Keyword(3) | vertical structure |
| Keyword(4) | breakdown voltage |
| Keyword(5) | on-state voltage |
| 1st Author's Name | Kazushi NAKAZAWA |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Hiroaki UENO |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Hisayoshi MATSUO |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Manabu YANAGIHARA |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Yasuhiro UEMOTO |
| 5th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 6th Author's Name | Tetsuzo UEDA |
| 6th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 7th Author's Name | Tsuyoshi TANAKA |
| 7th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| Date | 2006-10-05 |
| Paper # | ED2006-156,CPM2006-93,LQE2006-60 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |