| Presentation | 2006-10-05 Study on crystal growth of AlGaN/GaN HEMT on SiC substrate Takahiko IWASAKI, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN HEMT is a promising candidate for next generation high-power and high-frequency devices. In our study to improve electron mobility, MOCVD method was used to grow AlGaN/GaN HEMT structure on SiC substrate. In the investigation of AlN initial layer thickness dependence, AlN initial layer with 100nm thickness shows very good electron mobility of 1568cm^2/Vs at RT. Furthermore, in our study with the insertion of AlN spacer layer and its thickness dependence, high electron mobility of 2189cm^2/Vs at RT and 20998cm^2/Vs at 77K were obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC substrate / GaN / AlGaN/GaN / MOCVD / HEMT |
| Paper # | ED2006-155,CPM2006-92,LQE2006-59 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2006/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on crystal growth of AlGaN/GaN HEMT on SiC substrate |
| Sub Title (in English) | |
| Keyword(1) | SiC substrate |
| Keyword(2) | GaN |
| Keyword(3) | AlGaN/GaN |
| Keyword(4) | MOCVD |
| Keyword(5) | HEMT |
| 1st Author's Name | Takahiko IWASAKI |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology() |
| 2nd Author's Name | Hiroyasu ISHIKAWA |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi EGAWA |
| 3rd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2006-10-05 |
| Paper # | ED2006-155,CPM2006-92,LQE2006-59 |
| Volume (vol) | vol.106 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |